IRF9230 Datasheet, PDF (3/7 Pages) Seme LAB – P-CHANNEL POWER MOSFET

IRF9230, IRF9231, IRF9232, IRF9233
Electrical Specifications T_C = 25^oC, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Drain Inductance
C_ISS V_DS = -25V, V_GS = 0V, f = 1MHz, (Figure 11)
-
550
-
pF
C_OSS
-
170
-
pF
C_RSS
-
50
-
pF
L_D
Measured Between the Modified MOSFET
-
5.0
-
nH
Contact Screw on the Symbol Showing the
Flange that is Closer to Internal Devices
Source and Gate Pins Inductances
and the Center of Die
D
Internal Source Inductance
L_S
Measured From the
Source Lead, 6mm
(0.25in) From the
G
Flange and the Source
Bonding Pad
L_D
-
12.5
-
nH
L_S
S
Thermal Resistance Junction to Case
Thermal Resistance
Junction to Ambient
R_θJC
R_θJA
Typical Socket Mount
-
-
1.67 ^oC/W
-
-
60 ^oC/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Continuous Source to Drain Current
Pulse Source to Drain Current
(Note 3)
I_SD
I_SDM
Modified MOSFET
Symbol Showing the
Integral Reverse
P-N Junction Diode
G
-
-
-6.5
A
D
-
-
-26
A
S
Source to Drain Diode Voltage
(Note 2)
Reverse Recovery Time
Reverse Recovery Charge
V_SD
T_C = 25^oC, I_SD = -6.5A, V_GS = 0V,
-
(Figure 13)
t_rr
T_J = 150^oC, I_SD = -6.5A, dI_SD/dt = 100A/µs
-
Q_RR
T_J = 150^oC, I_SD = -6.5A, dI_SD/dt = 100A/µs
-
-
-1.5
V
400
-
ns
2.6
-
µC
NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. V_DD = 50V, starting T_J = 25^oC, L = 17.75mH, R_G = 25Ω, peak I_AS = 6.5A (Figures 15, 16).
6-3