HA-5330_04 Datasheet, PDF (5/5 Pages) Intersil Corporation – 650ns Precision Sample and Hold Amplifier

Die Characteristics
DIE DIMENSIONS:
99 mils x 166 mils x 19 mils
2510µm x 4210µm x 483µm
METALLIZATION:
Type: Al, 1% Cu
Thickness: 16kÅ ±2kÅ
Metallization Mask Layout
+IN
OFFSET ADJ
OFFSET ADJ
V-
HA-5330
PASSIVATION:
Type: Nitride (Si₃N₄) over Silox (SiO₂, 5% Phos.)
Silox Thickness: 12kÅ ±2kÅ
Nitride Thickness: 3.5kÅ ±1.5kÅ
SUBSTRATE POTENTIAL (POWERED UP):
Signal GND
TRANSISTOR COUNT:
205
PROCESS:
Bipolar Dielectric Isolation
HA-5330
-IN
SIGNAL GND
SUPPLY GND
V+
OUTPUT
S/H CONTROL
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Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
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