RFT3055LE Datasheet, PDF (4/10 Pages) Intersil Corporation – 2.0A, 60V, 0.150 Ohm, N-Channel, Logic Level, ESD Rated, Power MOSFET

RFT3055LE
Typical Performance Curves Unless otherwise specified (Continued)
20
If R = 0
t_AV = (L)(I_AS)/(1.3*RATED BV_DSS - V_DD)
10 If R ≠ 0
t_AV = (L/R)ln[(I_AS*R)/(1.3*RATED BV_DSS - V_DD) +1]
STARTING T_J = 25^oC
1
STARTING T_J = 150^oC
0.1
0.01
0.1
1
10
100
t_AV, TIME IN AVALANCHE (ms)
NOTE: Refer to Intersil Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
20
V_GS = 10V
16
12
8
4
V_GS = 5V
V_GS = 4.5V
V_GS = 4V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
T_A = 25^oC
V_GS = 3V
0
0
1
2
3
4
5
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 7. SATURATION CHARACTERISTICS
20
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
16 ^{VDD = 15V}
12
-55^oC
150^oC
25^oC
8
4
0
0
1.5
3.0
4.5
6.0
V_GS, GATE TO SOURCE VOLTAGE (V)
FIGURE 8. TRANSFER CHARACTERISTICS
1.2
V_GS = V_DS, I_D = 250µA
1.1
1.0
0.9
0.8
0.7
-80
-40
0
40
80
120
160
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
2.0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
1.75 V_GS = 5V, I_D = 2A
1.5
1.25
1.0
0.75
0.5
-80
-40
0
40
80
120
160
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
1.15
I_D = 250µA
1.1
1.05
1.0
0.95
0.9
-80
-40
0
40
80
120
160
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
8-146