RFT3055LE Datasheet, PDF (1/10 Pages) Intersil Corporation – 2.0A, 60V, 0.150 Ohm, N-Channel, Logic Level, ESD Rated, Power MOSFET

Data Sheet
RFT3055LE
August 1999 File Number 4537.3
2.0A, 60V, 0.150 Ohm, N-Channel, Logic
Level, ESD Rated, Power MOSFET
This product is an N-Channel power MOSFET manufactured
using the MegaFET process. This process, which uses
feature sizes approaching those of LSI circuits, gives
optimum utilization of silicon, resulting in outstanding
performance. It was designed for use in applications such as
switching regulators, switching converters, motor drivers,
and relay drivers. These transistors can be operated directly
from integrated circuits.
Formerly developmental type TA49158.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFT3055LE
SOT-223
3055L
NOTE: RFT3055LE is available only in tape and reel.
Features
• 2.0A, 60V
• r_DS(ON) = 0.150Ω
• 2kV ESD Protected
• Temperature Compensating PSPICE^® Model
• Thermal Impedance SPICE Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
DRAIN
(FLANGE)
SOT-223
SOURCE
DRAIN
GATE
8-143
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE® is a registered trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999