RFP45N03L Datasheet, PDF (4/7 Pages) Intersil Corporation – 45A, 30V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs

RFP45N03L, RF1S45N03L, RF1S45N03LSM
Typical Performance Curves Unless Otherwise Specified (Continued)
200
100
STARTING T_J = 25^oC
10
STARTING T_J = 150^oC
If R = 0
t_AV = (L)(I_AS)/(1.3*RATED BV_DSS - V_DD)
If R ≠ 0
t_AV = (L/R)ln[(I_AS*R)/(1.3*RATED BV_DSS-V_DD) +1]
1
0.001
0.01
0.1
1
10
100
t_AV, TIME IN AVALANCHE (ms)
NOTE: Refer to Harris Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
100
V_GS = 10V
V_GS = 5V
75
V_GS = 4.5V
50
V_GS = 4V
V_GS = 3.5V
25
V_GS = 3V
PULSE DURATION = 250µs, T_C = 25^oC
0
0
1
2
3
4
5
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 7. SATURATION CHARACTERISTICS
100
V_DD = 15V
75
50
-55^oC
175^oC
25^oC
25
PULSE TEST
PULSE DURATION = 250µs
DUTY CYCLE = 0.5% MAX
0
0
1.5
3.0
4.5
6.0
7.5
V_GS, GATE TO SOURCE VOLTAGE (V)
FIGURE 8. TRANSFER CHARACTERISTICS
100
75
I_D = 15A I_D = 30A I_D = 45A
50
I_D = 2A
25
0
2.5
PULSE DURATION = 250µs
3.0
3.5
4.0
4.5
5.0
V_GS, GATE TO SOURCE VOLTAGE (V)
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
350
V_DD = 15V, I_D = 45A, R_L = 0.333Ω
300
t_r
250
200
150
100
50
0
0
t_f
t_d(OFF)
t_d(ON)
10
20
30
40
50
R_GS, GATE TO SOURCE RESISTANCE (Ω)
FIGURE 10. SWITCHING TIME vs GATE RESISTANCE
2.0
PULSE DURATION = 250µs, V_GS = 5V, I_D = 45A
1.5
1.0
0.5
0
-80 -40
0
40
80
120
160 200
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 11. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
7-4