RFP45N03L Datasheet, PDF (1/7 Pages) Intersil Corporation – 45A, 30V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs

Semiconductor
September 1998
RFP45N03L,
RF1S45N03L, RF1S45N03LSM
45A, 30V, 0.022 Ohm,
Logic Level, N-Channel Power MOSFETs
[ /Title
(RFP45
N03L,
RF1S45
N03L,
RF1S45
N03LS
M)
/Subject
(45A,
30V,
0.022
Ohm,
Features
• 45A, 30V
• r_DS(ON) = 0.022Ω
• Temperature Compensating PSPICE Model
• Can be Driven Directly from CMOS, NMOS, and TTL
Circuits
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175^oC Operating Temperature
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Description
These are N-Channel power MOSFETs manufactured using
the MegaFET process. This process, which uses feature
sizes approaching those of LSI circuits, gives optimum utili-
zation of silicon, resulting in outstanding performance. They
were designed for use in applications such as switching reg-
ulators, switching converters, motor drivers and relay drivers.
These transistors can be operated directly from integrated
circuits.
Formerly developmental type TA49030.
Symbol
D
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFP45N03L
TO-220AB
FP45N03L
RF1S45N03L
TO-262AA
F45N03L
RF1S45N03LSM TO-263AB
F45N03L
NOTE: When ordering, use the entire part number. Add the suffix 9A, to
obtain the TO-263AB variant in tape and reel, e.g., RF1S45N03LSM9A.
G
S
Packaging
JEDEC TO-220AB
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
JEDEC TO-262AA
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
JEDEC TO-263AB
GATE
SOURCE
DRAIN
(FLANGE)
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1998
7-1
File Number 4005.2