RFP25N06 Datasheet, PDF (4/8 Pages) Fairchild Semiconductor – 25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs

RFP25N06, RF1S25N06SM
Typical Performance Curves Unless Otherwise Specified (Continued)
100
STARTING T_J = 25^oC
10
STARTING T_J = 150^oC
If R = 0
t_AV = (L)(I_AS)/(1.3*RATED BV_DSS - V_DD)
If R ≠ 0
t_AV = (L/R)ln[(I_AS*R)/(1.3*RATED BV_DSS-V_DD) +1]
1
0.01
0.1
1
10
t_AV, TIME IN AVALANCHE (µs)
NOTE: Refer to Intersil Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
70
V_GS = 20V
60
50
40
30
20
V_GS = 10V
V_GS = 8V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
T_C = 25^oC
V_GS = 7V
V_GS = 6V
10
0
0
V_GS = 4.5V
V_GS = 5V
2
4
6
8
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 7. SATURATION CHARACTERISTICS
70
V_DD = 15V
60 PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
50
40
30
-55^oC
25^oC
175^oC
20
10
0
0
2
4
6
8
10
V_GS, GATE TO SOURCE VOLTAGE (V)
FIGURE 8. TRANSFER CHARACTERISTICS
2.5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V_GS = 10V, I_D = 25A
2.0
1.5
1.0
0.5
0
-80 -40
0
40
80
120 160 200
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
2.0
V_GS = V_DS
I_D = 250µA
1.5
2.0
I_D = 250µA
1.5
1.0
1.0
0.5
0
-80 -40
0
40
80
120 160 200
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
0.5
0
-80 -40
0
40
80
120 160 200
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
4-514