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RFP25N06 Datasheet, PDF (2/8 Pages) Fairchild Semiconductor – 25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs
◁
RFP25N06, RF1S25N06SMS
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
RFP25N06,
RF1S25N06SM
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Continuous Drain Current (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg
60
60
±20
25
(Figure 5)
(Figure 6)
72
0.48
-55 to 175
300
260
V
V
V
A
W
W/oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 150oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
Drain to Source Breakdown Voltage
Gate to Source Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at 10V
Threshold Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
BVDSS ID = 250µA, VGS = 0V (Figure 11)
60
-
-
V
VGS(TH)
IDSS
VGS = VDS, ID = 250µA (Figure 10)
VDS = 60V
TC = 25oC
VGS = 0V
TC = 150oC
2
-
4
V
-
-
1
µA
-
-
50
µA
IGSS
VGS = ±20V
-
-
±100
nA
rDS(ON) ID = 25A, VGS = 10V (Figure 9)
-
-
0.047
Ω
tON
td(ON)
tr
VDD = 30V, ID = 12.5A
RL = 2.4Ω, VGS = 10V
RGS = 10Ω
(Figure 13)
-
-
60
ns
-
14
-
ns
-
30
-
ns
td(OFF)
-
45
-
ns
tf
-
22
-
ns
tOFF
-
-
100
ns
Qg(TOT) VGS = 0 to 20V VDD = 48V, ID = 25A,
-
Qg(10)
VGS = 0 to 10V
RL = 1.92Ω
Ig(REF) = 0.75mA
-
Qg(TH) VGS = 0 to 2V
(Figure 13)
-
-
80
nC
-
45
nC
-
3
nC
CISS
COSS
CRSS
RθJC
RθJA
VDS = 25V, VGS = 0V
f = 1MHz
(Figure 12)
(Figure 3)
-
975
-
pF
-
330
-
pF
-
95
-
pF
-
-
2.083 oC/W
-
-
62
oC/W
Source to Drain Diode Specifications
PARAMETER
Source to Drain Diode Voltage
Reverse Recovery Time
SYMBOL
TEST CONDITIONS
VSD
trr
ISD = 25A
ISD = 25A, dISD/dt = 100A/µs
MIN TYP MAX UNITS
-
-
1.5
V
-
-
125
ns
4-512
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