RFM18N08 Datasheet, PDF (4/5 Pages) Intersil Corporation – 18A, 80V and 100V, 0.100 Ohm, N-Channel Power MOSFETs

RFM18N08, RFM18N10, RFP18N08, RFP18N10
Typical Performance Curves Unless Otherwise Specified (Continued)
2.0
V_GS = 10V
I_D = 18A
PULSE DURATION = 80µs
1.5
1.4
V_GS = V_DS
I_D = 250µA
1.2
1.0
1
0.5
0.8
0
-50
0
50
100
150
200
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 7. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
0.6
-50
0
50
100
150
200
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
2400
2000
1600
1200
800
400
0
0
V_GS = 0V, f = 1MHz
C_ISS = C_GS + C_GD
C_RSS = C_GD
C_OSS ≈ C_DS + C_GD
C_ISS
C_OSS
C_RSS
10
20
30
40
50
60
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
100
10
R_L = 5.56Ω
I_G(REF) = 1mA
75
V_DD = BV_DSS
GATE
V_GS = 10V
V_DD = BV_DSS
8
SOURCE
VOLTAGE
6
50
0.75BV_DSS
4
0.50BV_DSS
25
0.25BV_DSS
2
DRAIN SOURCE VOLTAGE
0
20
I_G(REF)
I_G(ACT)
t, TIME (µs)
0
80
I_G(REF)
I_G(ACT)
NOTE: Refer to Harris Application Notes AN7254 and AN7260.
FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT
5-4