RFM18N08 Datasheet, PDF (2/5 Pages) Intersil Corporation – 18A, 80V and 100V, 0.100 Ohm, N-Channel Power MOSFETs

RFM18N08, RFM18N10, RFP18N08, RFP18N10
Absolute Maximum Ratings T_C = 25^oC, Unless Otherwise Specified
RFM18N08 RFM18N10 RFP18N08 RFP18N10 UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . V_DSS
Drain to Gate Voltage (R_GS = 20kΩ) (Note 1) . . . . . . . . . . . . . . V_DGR
Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . T_J, T_STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . T_L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . T_pkg
80
80
18
45
±20
100
0.8
-55 to 150
300
260
100
100
18
45
±20
100
0.8
-55 to 150
300
260
80
80
18
45
±20
75
0.6
-55 to 150
300
260
100
100
18
45
±20
75
0.6
-55 to 150
300
260
V
V
A
A
V
W
W/^oC
o_C
o_C
o_C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T_J = 25^oC to 125^oC.
Electrical Specifications T_C = 25^oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Drain to Source Breakdown Voltage
BV_DSS I_D = 250µA, V_GS = 0V
RFM18N08, RFP18N08
80
RFM18N10, RFP18N10
100
Gate Threshold Voltage
V_GS(TH) V_GS = V_DS, I_D = 250µA, (Figure 8)
2
Zero Gate Voltage Drain Current
I_DSS V_DS = Rated BV_DSS, V_GS = 0V
-
V_DS = 0.8 x Rated BV_DSS, V_GS = 0V, T_C = 125^oC -
Gate to Source Leakage Current
I_GSS V_GS = ±20V, V_DS = 0V
-
Drain to Source On Resistance (Note 2) r_DS(ON) I_D = 18A, V_GS = 10V, (Figures 6, 7)
-
Drain to Source On Voltage (Note 2)
V_DS(ON) I_D = 18A, V_GS = 10V
-
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
t_d(ON) V_DD = 50V, I_D ≈ 9A, R_G = 50Ω, V_GS = 10V,
-
t_r
R_L = 5.5Ω
(Figures 10, 11, 12)
-
t_d(OFF)
-
Fall Time
t_f
-
Input Capacitance
Output Capacitance
C_ISS V_DS = 25V, V_GS = 0V, f = 1MHz,
-
(Figure 9)
C_OSS
-
Reverse-Transfer Capacitance
C_RSS
-
Thermal Resistance Junction to Case
R_θJC RFM18N08, RFM18N10
-
RFP18N08, RFP18N10
-
TYP MAX UNITS
-
-
V
-
-
V
-
4
V
-
1
µA
-
25 µA
- ±100 nA
- 0.100 Ω
- 1.8 V
60 90 ns
300 450 ns
150 225 ns
150 225 ns
- 1700 pF
- 750 pF
- 300 pF
- 1.25 ^oC/W
- 1.67 ^oC/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Source to Drain Diode Voltage (Note 2)
V_SD
I_SD = 9A
Diode Reverse Recovery Time
t_rr
I_SD = 4A, dI_SD/dt = 100A/µs
NOTES:
2. Pulse test: width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width is limited by maximum junction temperature.
MIN
TYP MAX UNITS
-
-
1.4
V
-
150
-
ns
5-2