RFG60P05E Datasheet, PDF (4/7 Pages) Fairchild Semiconductor – 60A, 50V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET

RFG60P05E
Typical Performance Curves Unless Otherwise Specified (Continued)
-200
-100
STARTING T_J = 25^oC
STARTING T_J = 150^oC
If R = 0
t_AV = (L) (I_AS) / (1.3RATED BV_DSS - V_DD)
If R ≠ 0
t_AV = (L/R) ln [(I_AS*R) / (1.3 RATED BV_DSS - V_DD) + 1]
-10
0.01
0.1
1
10
t_AV, TIME IN AVALANCHE (ms)
NOTE: Refer to Intersil Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
-160
V_GS = -20V
-120
V_GS = -10V
-80
-40
V_GS = -8V
V_GS = -7V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
T_C = 25^oC
V_GS = -4.5V
V_GS = -6V
V_GS = -5V
0
0
-2
-4
-6
-8
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 7. SATURATION CHARACTERISTICS
-160
-120
V_DD = -15V
PULSE DURATIONM = 80µs
DUTY CYCLE = 0.5% MAX
-55^oC
25^oC
-80
175^oC
2
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V_GS = -10V, I_D = 60A
1.5
1
-40
0.5
0
0
-2
-4
-6
-8
-10
V_GS, GATE TO SOURCE VOLTAGE (V)
FIGURE 8. TRANSFER CHARACTERISTICS
0
-80 -40
0
40
80 120 160 200
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
2
V_GS = V_DS, I_D = 250µA
1.5
1
0.5
0
-80 -40
0
40
80 120 160 200
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
2
I_D = 250µA
1.5
1
0.5
0
-80 -40
0
40
80
120 160 200
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
4-150