RFG60P05E Datasheet, PDF (2/7 Pages) Fairchild Semiconductor – 60A, 50V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET

RFG60P05E
Absolute Maximum Ratings T_C = 25^oC, Unless Otherwise Specified
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DS
Drain to Gate Voltage (R_GS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GS
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_D
Pulsed Drain Current (Note 3) (Figure 5) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I_DM
Power Dissipation . . .
Derate above 25^oC.
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P_D
...
Single Pulse Avalanche Rating (Figure 6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E_AS
Electrostatic Discharge Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E_SD
MIL-STD-883, Category B(2)
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_J, T_STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T_L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_pkg
RFG60P05E
-50
-50
±20
60
Refer to Peak Current Curve
215
1.43
Refer to UIS Curve
2
-55 to 175
300
260
UNITS
V
V
V
A
W
W/^oC
W/^oC
kV
o_C
o_C
o_C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T_J = 25^oC to 150^oC.
Electrical Specifications T_C = 25^oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
BV_DSS
V_GS(TH)
I_D = 250µA, V_GS = 0V
V_GS = V_DS, I_D = 250µA
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I_DSS
I_GSS
V_DS = -50V, V_GS = 0V
V_DS = 0.8 x Rated BV_DSS, T_C = 150^oC
V_GS = ±20V
Drain to Source On Resistance (Note 2)
Turn-On Time
Turn-On Delay Time
Rise Time
r_DS(ON)
t_(ON)
t_d(ON)
t_r
I_D = 60A, V_GS = -10V (Figure 9)
V_DD = -25V, I_D = 30A, R_L = 0.83Ω,
V_GS = -10V, R_GS = 2.5Ω
(Figure 13)
Turn-Off Delay Time
t_d(OFF)
Fall Time
t_F
Turn-Off Time
t_(OFF)
Total Gate Charge
Gate Charge at 10V
Threshold Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Q_g(TOT)
Q_g(-10)
Q_g(TH)
C_ISS
C_OSS
C_RSS
V_GS = 0V to -20V
V_GS = 0V to -10V
V_GS = 0V to -2V
V_DD = -40V, I_D = 60A,
R_L = 0.67Ω
I_g(REF) = -4mA
V_DS = -25V, V_GS = 0V, f = 1MHz
(Figure 12)
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
R_θJC
R_θJA
MIN TYP MAX UNITS
-50
-
-
V
-2
-
-4
V
-
-
-1
µA
-
-
-25
µA
-
- ±100 nA
-
- 0.030 Ω
-
-
125
ns
-
20
-
ns
-
60
-
ns
-
65
-
ns
-
20
-
ns
-
-
125
ns
-
-
450 nC
-
-
225 nC
-
-
15
nC
- 7200 -
pF
- 1700 -
pF
-
325
-
pF
-
-
0.70 ^oC/W
-
-
30 ^oC/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
Source to Drain Diode Voltage (Note 2)
Diode Reverse Recovery Time
NOTE:
V_SD
I_SD = -60A
t_RR
I_SD = -60A, dI_SD/dt = 100A/µs
-
-
-1.75
-
-
200
2. Pulse test: pulse width ≤ 300µs maximum, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
UNITS
V
ns
4-148