RFG50N06LE Datasheet, PDF (4/8 Pages) Intersil Corporation – 50A, 60V, 0.022 Ohm, Logic Level N-Channel Power MOSFETs

RFG50N06LE, RFP50N06LE, RF1S50N06LESM
Typical Performance Curves Unless Otherwise Specified (Continued)
300
t_AV = (L/R)ln[(I_AS*R)/(1.3*RATED BV_DSS - V_DD) +1]
If R ≠ 0
100
t_AV = (L)(I_AS)/(1.3*RATED BV_DSS - V_DD)
If R = 0
100
T_C = 25^oC
75
V_GS = 10V
V_GS = 5V
V_GS = 4V
10
STARTING T_J = 150^oC
STARTING T_J = 25^oC
1
0.01
0.1
1
10
100
t_AV, TIME IN AVALANCHE (ms)
NOTE: Refer to Intersil Application Notes AN9321 and AN9322
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
100
V_DD = 15V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
75
-55^oC
25^oC
175^oC
50
25
0
0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V_GS = 3V
V_GS = 2.5V
1.5
3.0
4.5
6.0
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 7. SATURATION CHARACTERISTICS
80
I_D = 12.5A
60
I_D = 50A
I_D = 100A
50
25
0
0
1.5
3.0
4.5
6.0
V_GS, GATE TO SOURCE VOLTAGE (V)
FIGURE 8. TRANSFER CHARACTERISTICS
600
V_DD = 30V, I_D = 50A, R_L= 0.6Ω
t_r
500
400
t_d(OFF)
300
t_f
200
100
t_d(ON)
0
0
10
20
30
40
50
R_GS, GATE TO SOURCE RESISTANCE (Ω)
FIGURE 10. SWITCHING TIME vs GATE RESISTANCE
40
I_D = 25A
20
V_DD = 15V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
0
2.0
2.5
3.0
3.5
4.0
4.5
5.0
V_GS, GATE TO SOURCE VOLTAGE (V)
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
2.5
V_GS = 5V, I_D = 50A
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
2.0
1.5
1.0
0.5
-80
-40
0
40
80
120 160 200
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 11. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
4