RFG50N06LE Datasheet, PDF (2/8 Pages) Intersil Corporation – 50A, 60V, 0.022 Ohm, Logic Level N-Channel Power MOSFETs

RFG50N06LE, RFP50N06LE, RF1S50N06LESM
Absolute Maximum Ratings T_C = 25^oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DSS
Drain to Gate Voltage (R_GS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . V_DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GS
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I_D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_DM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E_AS
Power Dissipation . . .
Derate Above 25^oC
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P_D
..
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_J, T_STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T_pkg
RFG50N06LE, RFP50N06LE,
RF1S50N06LESM
60
60
±10
50
Refer to Peak Current Curve
Refer to UIS Curve
142
0.95
-55 to 175
300
260
UNITS
V
V
V
A
W
W/^oC
o_C
o_C
o_C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T_J = 25^oC to 150^oC.
Electrical Specifications T_C = 25^oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNITS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at 5V
Threshold Gate Charge
BV_DSS I_D = 250µA, V_GS = 0V, Figure 13
60
-
-
V
V_GS(TH) V_GS = V_DS, I_D = 250µA, Figure 12
1
-
3
V
I_DSS
V_DS = 55V, V_GS = 0V
-
V_DS = 50V, V_GS = 0V, T_C = 150^oC
-
-
1
µA
-
250
µA
I_GSS
V_GS = ±10V
-
-
10
µA
r_DS(ON) I_D = 50A, V_GS = 5V, Figure 11
-
-
0.022
Ω
t_ON
t_d(ON)
t_r
V_DD = 30V, I_D = 50A,
R_L = 0.6Ω, V_GS = 5V,
R_GS = 2.5Ω
Figures 10, 18, 19
-
-
230
ns
-
20
-
ns
-
170
-
ns
t_d(OFF)
-
48
-
ns
t_f
-
90
-
ns
t_OFF
-
-
165
ns
Q_g(TOT)
Q_g(5)
Q_g(TH)
V_GS = 0V to 10V
V_GS = 0V to 5V
V_GS = 0V to 1V
V_DD = 48V,
I_D = 50A,
R_L = 0.96Ω
Figures 21, 21
-
96
120
nC
-
57
70
nC
-
2.2
2.7
nC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
C_ISS
C_OSS
C_RSS
R_θJC
R_θJA
V_DS = 25V, V_GS = 0V,
f = 1MHz
Figure 14
TO-247
TO-220AB and TO-263AB
-
2100
-
pF
-
600
-
pF
-
230
-
pF
-
-
1.05
o_C/W
-
-
30
o_C/W
-
-
80
o_C/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
Source to Drain Diode Voltage
Diode Reverse Recovery Time
NOTES:
V_SD
I_SD = 45A
t_rr
I_SD = 45A, dI_SD/dt = 100A/µs
-
-
-
-
2. Pulse test: pulse width ≤ 80µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
MAX
1.5
125
UNITS
V
ns
2