RFD8P06LE Datasheet, PDF (4/8 Pages) Intersil Corporation – 8A, 60V, 0.300 Ohm, ESD Rated, Logic Level, P-Channel Power MOSFET

RFD8P06LE, RFD8P06LESM, RFP8P06LE
Typical Performance Curves Unless Otherwise Specified
-30
STARTING T_J = 25^oC
-10
STARTING T_J = 150^oC
If R = 0
t_AV = (L) (I_AS) / (1.3RATED BV_DSS - V_DD)
If R ≠ 0
t_AV = (L/R) ln [(I_AS*R) / (1.3 RATED BV_DSS - V_DD) + 1]
-1
0.01
0.1
1
10
t_AV, TIME IN AVALANCHE (ms)
NOTE: Refer to Intersil Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
-30
PULSE DURATION = 250µs
DUTY CYCLE = 0.5% MAX
-25 T_C = 25^oC
-20
V_GS = -10V
-15
V_GS = -5V
V_GS = -4.5V
-10
V_GS = -4V
-5
V_GS = -3V
0
0
-1.5
-3.0
-4.5
-6.0
-7.5
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 7. SATURATION CHARACTERISTICS
-30
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
-25 ^VDD ^{= -15V}
-55^oC
25^oC
-20
175^oC
-15
-10
-5
0
0
-1.5
-3.0
-4.5
-6.0
-7.5
V_GS, GATE TO SOURCE VOLTAGE (V)
FIGURE 8. TRANSFER CHARACTERISTICS
600
I_D = -8A
500
I_D = -4A
I_D = -2A
I_D = -1A
400
300
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
200
-2.0
-2.5
-3.0
-3.5
-4.0
-4.5
-5.0
V_GS, GATE TO SOURCE VOLTAGE (V)
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
2.25
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
2.00 _{VGS = -5V, ID = -8A}
1.75
1.50
1.25
1.00
0.75
0.50
-80
-40
0
40
80
120 160 200
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 10. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
2.0
I_D = -250µA
1.15
1.1
1.05
1.0
0.95
0.9
-80
-40
0
40
80 120 160 200
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
7-14