RFD8P06LE Datasheet, PDF (2/8 Pages) Intersil Corporation – 8A, 60V, 0.300 Ohm, ESD Rated, Logic Level, P-Channel Power MOSFET

RFD8P06LE, RFD8P06LESM, RFP8P06LE
Absolute Maximum Ratings T_C = 25^oC Unless Otherwise Specified
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V_DS
Drain to Gate Voltage (R_GS = 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DGR
Continuous Drain Current
T_C = 25^oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_D
T_C = 100^oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V_GS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_D
Dissipation Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E_AS
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_J, T_STG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L
(0.063in (1.6mm) from case for 10s)
RFD8P06LE, RFD8P06LESM,
RFP8P06LE
-60
-60
UNITS
V
V
-8
-6.3
See Figure 5
±10
48
0.32
See Figure 6
-55 to 175
300
A
A
V
W
W/^oC
o_C
o_C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T_J = 25^oC to 150^oC.
Electrical Specifications T_C = 25^oC Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
On Resistance (Note 1)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at -5V
Threshold Gate Charge
BV_DSS I_D = 250µA, V_GS = 0V (Figure 11)
-60
V_GS(TH) V_GS = V_DS, I_D = 250µA (Figure 12)
-1
I_DSS V_DS =- 60V, V_GS = 0V
T_J = 25^oC
-
T_J = 150^oC
-
I_GSS V_GS = ±10V
-
r_DS(ON) I_D = 8A, V_GS = -5V (Figure 9, 10)
-
I_D = 8A, V_GS = -4.5V (Figure 9, 10)
-
t_ON
V_DD = -30V, I_D ≅ 8A, R_GS = 9.1Ω, R_L = 3.75Ω
-
t_d(ON) ^{(Figure 13)}
-
t_r
-
t_d(OFF)
-
t_f
-
t_OFF
Q_g(TOT)
Q_g(-5)
Q_g(TH)
V_GS = 0 to -10V
V_GS = 0 to -5V
V_GS = 0 to -1V
-
V_DD = -48V, I_D ≅ 8A,
-
R_L = 6Ω
-
I_g(REF) = -0.2mA
(Figure 14)
-
-
-
V
-
-2
V
-
-1
µA
-
-50 µA
-
±10 µA
- 0.300 Ω
- 0.330 Ω
-
90
ns
10
-
ns
50
-
ns
30
-
ns
20
-
ns
-
75
ns
25 30 nC
15 18 nC
1.2 1.5 nC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
C_ISS
C_OSS
C_RSS
R_θJC
R_θJA
V_DS =- 25V, V_GS = 0V, f = 1MHz
(Figure 15)
TO-251AA, TO-252AA
TO-220AB
- 675 -
pF
- 175 -
pF
-
50
-
pF
-
- 3.125 ^oC/W
-
-
100 ^oC/W
80 ^oC/W
Source to Drain Diode Specifications T_C = 25^oC Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Source to Drain Diode Voltage (Note 1)
Reverse Recovery Time
V_SD T_J = 25^oC, I_SD =- 8A, V_GS = 0V
t_rr
T_J = 25^oC, I_SD =- 8A, dI_SD/dt = 100A/µs
NOTE:
2. Pulse Test: Pulse width ≤300µs, Duty Cycle ≤2%.
MIN TYP MAX UNITS
-
-
-1.5
V
-
- 125 ns
7-12