RFD8P06E Datasheet, PDF (4/8 Pages) Intersil Corporation – 8A, 60V, 0.300 Ohm, P-Channel Power MOSFETs

RFD8P06E, RFD8P06ESM, RFP8P06E
Typical Performance Curves Unless Otherwise Specified (Continued)
-30
STARTING T_J = 25^oC
-10
STARTING T_J = 150^oC
If R = 0
t_AV = (L) (I_AS) / (1.3RATED BV_DSS - V_DD)
If R ≠ 0
t_AV = (L/R) ln [(I_AS*R) / (1.3 RATED BV_DSS - V_DD) + 1]
-1
0.01
0.1
1
10
t_AV, TIME IN AVALANCHE (ms)
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
-20
V_DD = -15V
PULSE DURATION = 250µs
DUTY CYCLE = 0.5% MAX
-15
-10
-5
-55^oC
25^oC
175^oC
0
0
-2
-4
-6
-8
-10
V_GS, GATE TO SOURCE VOLTAGE (V)
FIGURE 8. TRANSFER CHARACTERISTICS
-20
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
T_C = 25^oC
-15
V_GS = -20V
-10
V_GS = -10V
V_GS = -8V
V_GS = -7V
V_GS = -6V
-5
V_GS = -4.5V
V_GS = -5V
0
0
-1.5
-3.0
-4.5
-6.0
-7.5
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 7. SATURATION CHARACTERISTICS
2.5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
2.0 ^{VGS = -10V, ID = 8A}
1.5
1.0
0.5
0
-80
-40
0
40
80 120 160 200
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
2.0
V_GS = V_DS, I_D = 250µA
1.5
2.0
I_D = 250µA
1.5
1.0
1.0
0.5
0.5
0
-80
-40
0
40
80
120 160 200
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
TEMPERATURE
0
-80 -40
0
40
80 120 160 200
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs TEMPERATURE
4-120