RFD8P06E Datasheet, PDF (2/8 Pages) Intersil Corporation – 8A, 60V, 0.300 Ohm, P-Channel Power MOSFETs

RFD8P06E, RFD8P06ESM, RFP8P06E
Absolute Maximum Ratings T_C = 25^oC
RFD8P06E, RFD8P06ESM, RFP8P06E
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DSS
Drain to Gate Voltage (R_GS = 20KΩ) (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GS
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I_D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_DM
Single Pulse Avalanche Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E_AS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
-60
-60
±20
8
Refer to Peak Current Curve
Refer to UIS Curve
48
0.32
Electrostatic Discharge Rating MIL-STD-883, Category B(2) . . . . . . . . . . . . . . . . . . . .ESD
2
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_J, T_STG
Maximum Temperature for Soldering
-55 to 175
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L
300
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T_pkg
260
UNITS
V
V
V
A
A
W
W/^oC
kV
o_C
o_C
o_C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T_J = 25^oC to 150^oC.
Electrical Specifications T_C = 25^oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 3)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at 5V
Threshold Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
BV_DSS
V_GS(TH)
I_DSS
I_GSS
r_DS(ON)
t_ON
t_d(ON)
t_r
t_d(OFF)
t_f
t_OFF
Q_g(TOT)
Q_g(-10)
Q_g(TH)
C_ISS
C_OSS
C_RSS
R_θJC
R_θJA
I_D = 250µA, V_GS = 0V
V_GS = V_DS, I_D = 250µA
V_DS = Rated BV_DSS, V_GS = 0V
V_DS = 0.8 x Rated BV_DSS, T_C = 150^oC
V_GS = ±20V
I_D = 8A, V_GS = -10V
V_DD = -30V, I_D ≈ 8A,
R_L = 3.75Ω, V_GS = -10V, R_G = 2.5Ω
(Figure 13)
V_GS = 0 to -20V
V_GS = 0 to -10V
V_GS = 0 to -2V
V_DD = -48V, I_D = 8A,
R_L = 6Ω
I_g(REF) = -1.45mA
V_DS = -25V, V_GS = 0V,
f = 1MHz
Figure 12
TO-220
TO-251, TO-252
MIN TYP MAX UNITS
-60
-
-
V
-2.0
-
-4.0
V
-
-
-1.0
µA
-
-
-25
µA
-
-
±10
µA
-
-
0.300
Ω
-
-
70
ns
-
15
-
ns
-
30
-
ns
-
40
-
ns
-
25
-
ns
-
-
100
ns
-
30
36
nC
-
15
18
nC
-
1.15 1.5
nC
-
600
-
pF
-
160
-
pF
-
35
-
pF
-
-
3.125 ^oC/W
-
-
62
o_C/W
-
-
100 ^oC/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
Source to Drain Diode Voltage
Diode Reverse Recovery Time
NOTES:
V_SD
t_rr
I_SD = -8A
I_SD = -8A, dI_SD/dt = -100A/µs
-
-
-1.5
-
-
125
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
UNITS
V
ns
4-118