RFD20N03 Datasheet, PDF (4/8 Pages) Intersil Corporation – 20A, 30V, 0.025 Ohm, N-Channel Power MOSFETs

RFD20N03, RFD20N03SM
Typical Performance Curves (Continued)
300
If R = 0
t_AV = (L)(I_AS)/(1.3*RATED BV_DSS - V_DD)
If R ≠ 0
t_AV = (L/R)ln[(I_AS*R)/(1.3*RATED BV_DSS - V_DD) + 1]
100
STARTING T_J = 25^oC
100
V_GS = 20V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V_GS = 10V
T_C = 25^oC
80
V_GS = 7V
60
40
V_GS = 6V
STARTING T_J = 150^oC
10
0.001
0.01
0.1
1
10
t_AV, TIME IN AVALANCHE (ms)
NOTE: Refer to Intersil Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
CAPABILITY
100
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
80 ^{VDD = 15V}
60
-55^oC
25^oC
175^oC
20
V_GS = 5V
0
0
1
2
3
4
5
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 7. SATURATION CHARACTERISTICS
2.0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V_GS = 10V, I_D = 20A
1.5
40
1.0
20
0
0
2
4
6
8
10
V_GS, GATE TO SOURCE VOLTAGE (V)
FIGURE 8. TRANSFER CHARACTERISTICS
1.2
V_GS = V_DS, I_D = 250µA
1.0
0.5
-80
-40
0
40
80
120 160 200
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
1.2
I_D = 250µA
1.1
0.8
1.0
0.6
0.9
0.4
-80
-40
0
40
80 120 160 200
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
0.8
-80
-40
0
40
80
120 160 200
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
4-430