RFD20N03 Datasheet, PDF (2/8 Pages) Intersil Corporation – 20A, 30V, 0.025 Ohm, N-Channel Power MOSFETs

RFD20N03, RFD20N03SM
Absolute Maximum Ratings T_C = 25^oC, Unless Otherwise Specified
UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DSS
30
V
Drain to Gate Voltage (R_GS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DGR
30
V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GS
±20
V
Drain Current
Continuous (Figure 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_D
20
A
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_DM
Figure 5
Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E_AS
Figure 6
Power Dissipation (Figure 4) .
Derate Above 25^oC (Figure
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.P_D
...
90
0.60
W
W/^oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_J, T_STG
-55 to 175
o_C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L
Package Body for 10s, See Techbrief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_pkg
300
260
o_C
o_C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T_J = 25^oC to 150^oC.
Electrical Specifications T_C = 25^oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate to Source Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at 10V
Threshold Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
BV_DSS
V_GS(TH)
I_DSS
I_GSS
r_DS(ON)
t_ON
t_d(ON)
t_r
t_d(OFF)
t_f
t_OFF
Q_g(TOT)
Q_g(10)
Q_g(TH)
C_ISS
C_OSS
C_RSS
R_θJC
R_θJA
I_D = 250µA, V_GS = 0V (Figure 11)
V_GS = V_DS, I_D = 250µA (Figure 10)
V_DS = 30V, V_GS = 0V
V_DS = 30V, V_GS = 0V, T_C = 150^oC
V_GS = ±20V
I_D = 20A, V_GS = 10V (Figure 9)
V_DD = 15V, I_D ≅ 20A,
R_L =0.75Ω, V_GS = 10V,
R_GS = 9.1Ω
V_GS = 0V to 20V
V_GS = 0V to 10V
V_GS = 0V to 2V
V_DD = 15V, I_D ≅ 20A,
R_L = 0.75Ω
I_g(REF) = 1.0mA
(Figure 13)
V_DS = 25V, V_GS = 0V, f = 1MHz
(Figure 12)
(Figure 3)
TO-251, TO-252
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovered Charge
V_SD
t_rr
Q_RR
I_SD = 20A
I_SD = 20A, dI_SD/dt = 100A/µs
I_SD = 20A, dI_SD/dt = 100A/µs
MIN TYP MAX UNITS
30
-
-
V
2
-
4
V
-
-
1
µA
-
-
50
µA
-
-
100
nA
-
0.022 0.025
Ω
-
-
60
ns
-
10
-
ns
-
30
-
ns
-
12
-
ns
-
32
-
ns
-
-
66
ns
-
60
75
nC
-
28
40
nC
-
2.4
2.9
nC
-
1150
-
pF
-
550
-
pF
-
110
-
pF
-
-
1.66 ^oC/W
-
-
100 ^oC/W
MIN TYP MAX UNITS
-
-
1.25
V
-
-
70
ns
-
-
145
nC
4-428