RFD16N06LE Datasheet, PDF (4/7 Pages) Intersil Corporation – 16A, 60V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs

RFD16N06LE, RFD16N06LESM
Typical Performance Curves Unless Otherwise Specified (Continued)
100
V_DD = 15V
PULSE DURATION = 80µs
80 ^{DUTY CYCLE = 0.5% MAX}
-55^oC
60
25^oC
175^oC
40
20
0
0
1.5
3.0
4.5
6.0
7.5
V_GS, GATE TO SOURCE VOLTAGE (V)
FIGURE 7. TRANSFER CHARACTERISTICS
2.5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX.
2.0 ^VGS ^{= 5V, I}D ^{= 16A}
1.5
1.0
0.5
0
-80 -40
0
40
80
120 160 200
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 8. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
2.0
V_GS = V_DS, I_D = 250µA
1.5
2.0
I_D = 250µA
1.5
1.0
1.0
0.5
0
-80 -40
0
40
80 120 160
200
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 9. NORMALIZED GATE THRESHOLD VOLTAGE vs
TEMPERATURE
2000
1500
C_ISS
1000
500
0
0
C_OSS
V_GS = 0V, f = 1MHz
C_ISS = C_GS + C_GD
C_RSS = C_GD
C_OSS ≈ C_DS + C_GD
C_RSS
5
10
15
20
25
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
4
0.5
0
-80 -40
0
40
80 120 160 200
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
60
5.00
V_DD = BV_DSS
45
V_DD = BV_DSS
3.75
30
2.50
0.75 BV_DSS 0.75 BV_DSS
0.50 BV_DSS 0.50 BV_DSS
15
0.25 BV_DSS 0.25 BV_DSS
1.25
RI_GL(R=_E3_F.₎7=5Ω_0.65mA
V_GS = 5V
0
0
20 _I-^I-_GG-----₍₍--_AR----_CE----^FT----^{)) t, TIME (µs)}
80 _I-^I-_GG-----₍₍--_AR----_CE----^FT----⁾⁾
NOTE: Refer to Intersil Application Notes AN7254 and AN7260.
FIGURE 12. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT