RFD16N06LE Datasheet, PDF (3/7 Pages) Intersil Corporation – 16A, 60V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs

RFD16N06LE, RFD16N06LESM
Typical Performance Curves Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75 100 125 150 175
T_C, CASE TEMPERATURE (^oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
20
15
10
5
0
25
50
75
100
125
150
175
T_C, CASE TEMPERATURE (^oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
200
T_C = 25^oC
100
T_J = MAX RATED
100µs
10
1
1
OPERATION IN THIS
AREA MAY BE
LIMITED BY r_DS(ON)
V_DSS MAX = 60V
10
V_DS, DRAIN TO SOURCE VOLTAGE (V)
1ms
10ms
100
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
500
T_C = 25^oC
V_GS = 10V
100
V_GS = 5V
FOR TEMPERATURES
ABOVE 25^oC DERATE PEAK
CURRENT AS FOLLOWS:
( ) ^{I = I25}
175 - T_C
150
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
1010_{-6 10-5}
10^-4
10^-3 10^-2
10^-1 10⁰
10¹
t, PULSE WIDTH (s)
FIGURE 4. PEAK CURRENT CAPABILITY
100
STARTING T_J = 25^oC
STARTING T_J = 150^oC
10
If R = 0
t_AV = (L)(I_AS)/(1.3*RATED BV_DSS - V_DD)
If R ≠ 0
t_AV = (L/R)ln[(I_AS*R)/(1.3*RATED BV_DSS - V_DD) +1]
1
0.01
0.1
1
10
t_AV, TIME IN AVALANCHE (ms)
FIGURE 5. UNCLAMPED INDUCTIVE SWITCHING
100
T_C =25^oC
80
V_GS = 10V
V_GS = 5V
V_GS = 4.5V
60
V_GS = 4V
40
V_GS = 3V
20
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX.
0
0
1.5
3.0
4.5
6.0
7.5
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 6. SATURATION CHARACTERISTICS
3