RFD16N02L Datasheet, PDF (4/8 Pages) Intersil Corporation – 16A, 20V, 0.022 Ohm, N-Channel, Logic Level, Power MOSFET

RFD16N02L, RFD16N02LSM
Typical Performance Curves (Continued)
200
100
V_GS = 10V
100
STARTING T_J = 25^oC
75
V_GS = 5V
V_GS = 4.5V
10
STARTING T_J = 150^oC
If R = 0
t_AV = (L)(I_AS)/(1.3*RATED BV_DSS - V_DD)
If R ≠ 0
t_AV = (L/R)ln[(I_AS*R)/(1.3*RATED BV_DSS-V_DD) +1]
1
0.001
0.01
0.1
1
10
100
t_AV, TIME IN AVALANCHE (ms)
NOTE: Refer to Intersil Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
100
V_DD = 15V
75
-55^oC
175^oC
25^oC
50
50
V_GS = 4V
V_GS = 3.5V
25
V_GS = 3V
PULSE DURATION = 250µs, T_C = 25^oC
00
1
2
3
4
5
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 7. SATURATION CHARACTERISTICS
100
I_D = 32A
75
I_D = 16A
I_D = 8A
50
I_D = 2A
25
PULSE TEST
PULSE DURATION = 250µs
DUTY CYCLE = 0.5% MAX
0
0
1.5
3.0
4.5
6.0
7.5
V_GS, GATE TO SOURCE VOLTAGE (V)
25
T_J = 25^oC, PULSE DURATION = 250µs
0
2.5
3.0
3.5
4.0
4.5
5.0
V_GS, GATE TO SOURCE VOLTAGE (V)
FIGURE 8. TRANSFER CHARACTERISTICS
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs
GATE VOLTAGE AND DRAIN CURRENT
250
V_DD = 15V, I_D = 16A, R_L = 0.93Ω
200
150
100
50
t_r
t_f
t_d(ON)
t_d(OFF)
2.0 _{PULSE DURATION = 250µs, VGS = 5V, ID = 16A}
1.5
1.0
0.5
0
0
10
20
30
40
50
R_GS, GATE TO SOURCE RESISTANCE (Ω)
FIGURE 10. SWITCHING TIME AS A FUNCTION OF GATE
RESISTANCE
0
-80 -40
0
40
80
120 160 200
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 11. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
4