RFD16N02L Datasheet, PDF (2/8 Pages) Intersil Corporation – 16A, 20V, 0.022 Ohm, N-Channel, Logic Level, Power MOSFET

RFD16N02L, RFD16N02LSM
Absolute Maximum Ratings T_C = 25^oC
RFD16N02L, RFD16N02LSM
UNITS
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DSS
20
V
Drain to Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DGR
20
V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GS
±10
V
Drain Current
RMS Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_D
16
A
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_DM
Refer to Peak Current Curve
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E_AS
Refer to UIS Curve
Power Dissipation . . . .
Derate Above 25^oC.
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.P_D
...
90
0.606
W
W/^oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T_J, T_STG
-55 to 175
o_C
Soldering Temperature of Leads for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L
260
o_C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications T_C = 25^oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP MAX UNITS
Drain to Source Breakdown Voltage
Gate to Source Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance
Turn-On Time
Turn-On Delay Time
Rise Time
BV_DSS
V_GS(TH)
I_DSS
I_GSS
r_DS(ON)
t_ON
t_d(ON)
t_r
I_D = 250µA, V_GS = 0V
V_GS = V_DS, I_D = 250µA
V_DS = 20V,
V_GS = 0V
T_C = 25^oC
T_C = 150^oC
V_GS = ±10V
I_D = 16A, V_GS = 5V
V_DD = 15V, I_D ≅ 16A,
R_L = 0.93Ω, V_GS = 5V,
R_GS = 5Ω
20
-
-
V
1
-
2
V
-
-
1
µA
-
-
50
µA
-
-
±100
nA
-
-
0.022
Ω
-
-
120
ns
-
15
-
ns
-
95
-
ns
Turn-Off Delay Time
Fall Time
t_d(OFF)
t_f
-
25
-
ns
-
27
-
ns
Turn-Off Time
Total Gate Charge
Gate Charge at 5V
Threshold Gate Charge
t_OFF
Q_g(TOT)
Q_g(5)
Q_g(TH)
V_GS = 0V to 10V V_DD ≅ 16V,
V_GS = 0V to 5V
I_D ≈ 16A,
R_L = 1.0Ω
V_GS = 0V to 1V
-
-
80
ns
-
50
60
nC
-
30
36
nC
-
1.5
1.8
nC
Input Capacitance
Output Capacitance
C_ISS
C_OSS
V_DS = 20V, V_GS = 0V,
f = 1MHz
-
1300
-
pF
-
724
-
pF
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
C_RSS
R_θJC
R_θJA
TO-251 and TO-252
-
250
-
pF
-
-
1.65
o_C/W
-
-
100
o_C/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNITS
Source to Drain Diode Voltage
Reverse Recovery Time
V_SD
I_SD = 16A
t_rr
I_SD = 16A, dI_SD/dt = 100A/µs
-
-
1.5
V
-
-
80
ns
2