IRFR9110 Datasheet, PDF (4/7 Pages) Intersil Corporation – 3.1A, 100V, 1.200 Ohm, P-Channel Power MOSFETs

IRFR9110, IRFU9110
Typical Performance Curves Unless Otherwise Specified (Continued)
-10
-7.75
STARTING T_J = 25^oC
E_AS = 140mJ
CONDITIONS:
V_DD = -25V, I_AS = -3.1A,
L = 21mH, STARTING T_J = 25^oC
STARTING T_J = 150^oC
If R = 0
t_AV = (L) (I_AS) / (1.3 RATED BV_DSS - V_DD)
If R ≠ 0
-1 ^{tAV = (L/R) In [(IAS * R) / (1.3 RATED BVDSS - VDD +1]}
0.01
0.1
1
10
T_AV, TIME IN AVALANCHE (ms)
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
-6
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
-5 ^TC ^{= 25oC}
V_GS = -20V
-4
-3
V_GS = -10V
V_GS = -8V
V_GS = -7V
-2
V_GS = -6V
-1
V_GS = -4.5V
V_GS = -5V
0
0
-2
-4
-6
-8
-10
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 7. SATURATION CHARACTERISTICS
-10
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
-8 ^{VDD = -15V}
-6
-4
-2
-55^oC
25^oC
150^oC
0
0
-2
-4
-6
-8
-10
V_GS, GATE TO SOURCE VOLTAGE (V)
FIGURE 8. TRANSFER CHARACTERISTICS
2.0
V_GS = V_DS, I_D = -250µA
1.5
1.0
0.5
0.0
-80 -40
0
40
80
120 160
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 9. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
2.5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
2.0 ^{VGS = -10V, ID = -3.1A}
1.5
1.0
0.5
0.0
-80
-40
0
40
80
120
180
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 10. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
2.0
V_GS = V_DS, ID = -250µA
1.5
1.0
0.5
0.0
-80
-40
0
40
80
120
160
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 11. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
4-80