 English |
|
|
|
|
|
|
|
| IRFR9110 Datasheet, PDF (2/7 Pages) Intersil Corporation – 3.1A, 100V, 1.200 Ohm, P-Channel Power MOSFETs | |||
| |||
| ◁ |
IRFR9110, IRFU9110
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Speciï¬ed
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
IRFR9110, IRFU9110
-100
-100
±20
3.1
Refer to Peak Current Curve
Refer to UIS Curve
25
0.2
-55 to 150
300
260
UNITS
V
V
V
A
W
W/oC
oC
oC
oC
CAUTION: Stresses above those listed in âAbsolute Maximum Ratingsâ may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this speciï¬cation is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Speciï¬cations TC = 25oC, Unless Otherwise Speciï¬ed
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate to Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
On Resistance
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate to Drain Charge
Gate to Source Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
BVDSS
VGS(TH)
IDSS
IGSS
rDS(ON)
tON
td(ON)
tr
td(OFF)
tf
tOFF
Qg
Qgd
Qgs
CISS
COSS
CRSS
RθJC
RθJA
ID = 250µA, VGS = 0V
VGS = VDS, ID = 250µA
VDS = -100V,
VGS = 0V
TC = 25oC
TC = 150oC
VGS = ±20V
ID = 1.9A, VGS = -10V
VDD = -50V, ID = 4A
RL = 11â¦, VGS = -10V
RGS = 24â¦
VGS = 0 to -10V
VDD = -80V,
ID = 3.1A,
RL = 25.8â¦
VDS = -25V, VGS = 0V
f = 1MHz
MIN
-100
-2.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP MAX UNITS
-
-
V
-
-4.0
V
-
-1
µA
-
-50
µA
-
100
nA
-
1.200
â¦
-
50
ns
10
-
ns
27
-
ns
15
-
ns
17
-
ns
-
50
ns
-
8.7
nC
-
4.1
nC
-
2.2
nC
290
-
pF
94
-
pF
18
-
pF
-
5.00 oC/W
-
100 oC/W
Source to Drain Diode Ratings and Speciï¬cations
PARAMETER
SYMBOL
TEST CONDITIONS
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
VSD
trr
QRR
ISD = -3.1A
ISD = -4.0A, dISD/dt = -100A/µs
MIN TYP MAX UNITS
-
-
-5.5
V
-
105 160
ns
0.51 1.0
µC
4-78
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese