HCS20MS Datasheet, PDF (4/8 Pages) Intersil Corporation – Radiation Hardened Dual 4-Input NAND Gate

Specifications HCS20MS
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
PARAMETER
Noise Immunity
Functional Test
Input to Yn
SYMBOL
(NOTES 1, 2)
CONDITIONS
FN
VCC = 4.5V, VIH = 0.70(VCC),
VIL = 0.30(VCC), (Note 3)
TPHL VCC = 4.5V
TPLH VCC = 4.5V
TEMPERATURE
+25^oC
200K RAD
LIMITS
MIN MAX UNITS
4.0
0.5
V
+25^oC
+25^oC
2
20
ns
2
22
ns
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500Ω, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = VCC.
3. For functional tests, VO ≥ 4.0V is recognized as a logic “1”, and VO ≤ 0.5V is recognized as a logic “0”.
TABLE 5. BURN-IN AND OPERATING LIFE TEST, DELTA PARAMETERS (+25^oC)
PARAMETER
GROUP B
SUBGROUP
DELTA LIMIT
ICC
5
3µA
IOL/IOH
5
-15% of 0 Hour
TABLE 6. APPLICABLE SUBGROUPS
CONFORMANCE GROUPS
METHOD
GROUP A SUBGROUPS
READ AND RECORD
Initial Test (Preburn-In)
100%/5004
1, 7, 9
ICC, IOL/H
Interim Test I (Postburn-In)
100%/5004
1, 7, 9
ICC, IOL/H
Interim Test II (Postburn-In)
100%/5004
1, 7, 9
ICC, IOL/H
PDA
100%/5004
1, 7, 9, Deltas
Interim Test III (Postburn-In)
100%/5004
1, 7, 9
ICC, IOL/H
PDA
100%/5004
1, 7, 9, Deltas
Final Test
100%/5004
2, 3, 8A, 8B, 10, 11
Group A (Note 1)
Sample/5005
1, 2, 3, 7, 8A, 8B, 9, 10, 11
Group B
Subgroup B-5
Sample/5005 1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas Subgroups 1, 2, 3, 9, 10, 11
Subgroup B-6
Sample/5005
1, 7, 9
Group D
Sample/5005
1, 7, 9
NOTE: 1. Alternate Group A testing in accordance with Method 5005 of MIL-STD-883 may be exercised.
Spec Number 518761
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