HAF70009 Datasheet, PDF (4/10 Pages) Intersil Corporation – 56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFET

HAF70009
Typical Performance Curves (Continued)
1000
T_J = MAX RATED
T_C = 25^oC
100
100µs
10
1
1
OPERATION IN THIS
AREA MAY BE
LIMITED BY r_DS(ON)
V_DSS(MAX) = 100V
1ms
10ms
10
100 200
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
300
If R = 0
t_AV = (L)(I_AS)/(1.3*RATED BV_DSS - V_DD)
If R ≠ 0
t_AV = (L/R)ln[(I_AS*R)/(1.3*RATED BV_DSS - V_DD) +1]
100
STARTING T_J = 25^oC
STARTING T_J = 150^oC
10
0.001
0.01
0.1
1
t_AV, TIME IN AVALANCHE (ms)
NOTE: Refer to Intersil Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
100
V_GS = 6V
80
VV_GGSS==2200VV
60
VV_GGSS==1100VV
VV_GGSS==77VV
40
20
0
0
V_GS = 5V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
T_C = 25^oC
1
2
3
4
5
6
7
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 7. SATURATION CHARACTERISTICS
3.0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
2.5 _{VGS = 10V, ID = 56A}
2.0
1.5
1.0
0.5
0
-80
-40
0
40
80 120 160 200
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
100
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
80
V_DD = 15V
60
175^oC
40
20
0
0
25^oC
-55^oC
1.5
3.0
4.5
6.0
7.5
V_GS, GATE TO SOURCE VOLTAGE (V)
FIGURE 8. TRANSFER CHARACTERISTICS
1.2
V_GS = V_DS, I_D = 250µA
1.0
0.8
0.6
-80 -40
0
40
80 120 160 200
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
4-4