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HAF70009 Datasheet, PDF (2/10 Pages) Intersil Corporation – 56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFET
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HAF70009
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ON STATE SPECIFICATIONS
BVDSS
IDSS
IGSS
ID = 250µA, VGS = 0V (Figure 11)
VDS = 90V, VGS = 0V
VDS = 80V, VGS = 0V, TC = 150oC
VGS = ±20V
Gate to Source Threshold Voltage
Drain to Source On Resistance
THERMAL SPECIFICATIONS
VGS(TH)
rDS(ON)
VGS = VDS, ID = 250µA (Figure 10)
ID = 56A, VGS = 10V (Figure 9)
Thermal Resistance Junction to Case
RθJC
Thermal Resistance Junction to Ambient
RθJA
SWITCHING SPECIFICATIONS (VGS = 10V)
Turn-On Time
tON
Turn-On Delay Time
td(ON)
Rise Time
tr
Turn-Off Delay Time
td(OFF)
Fall Time
tf
Turn-Off Time
tOFF
GATE CHARGE SPECIFICATIONS
(Figure 3)
TO-220
VDD = 50V, ID ≅ 56A,
RL = 0.89Ω, VGS = 10V,
RGS = 5.1Ω
(Figures 18,19)
Total Gate Charge
Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Reverse Transfer Capacitance
CAPACITANCE SPECIFICATIONS
Qg(TOT)
Qg(10)
Qg(TH)
Qgs
Qgd
VGS = 0V to 20V
VGS = 0V to 10V
VGS = 0V to 2V
VDD = 50V,
ID ≅ 56A,
RL = 0.89Ω
Ig(REF) = 1.0mA
(Figures 13, 16, 17)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS = 25V, VGS = 0V,
f = 1MHz
(Figure 12)
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovered Charge
VSD
trr
QRR
ISD = 56A
ISD = 56A, dISD/dt = 100A/µs
ISD = 56A, dISD/dt = 100A/µs
MIN TYP MAX UNITS
100
-
-
V
-
-
1
µA
-
-
250
µA
-
-
±100
nA
2
-
4
V
-
0.021 0.025
Ω
-
-
0.74 oC/W
-
-
62
oC/W
-
-
110
ns
-
15
-
ns
-
60
-
ns
-
20
-
ns
-
25
-
ns
-
-
70
ns
-
110
130
nC
-
57
75
nC
-
3.7
4.5
nC
-
9.8
-
nC
-
24
-
nC
-
2000
-
pF
-
500
-
pF
-
65
-
pF
MIN
TYP
MAX UNITS
-
-
1.25
V
-
-
110
ns
-
-
320
nC
4-2
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