RFP2N08 Datasheet, PDF (3/4 Pages) Intersil Corporation – 2A, 80V and 100V, 1.05 Ohm, N-Channel Power MOSFETs

RFP2N08, RFP2N10
Typical Performance Curves Unless otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150
T_C, CASE TEMPERATURE (^oC)
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
25
50
75
100
125
150
T_C, CASE TEMPERATURE (^oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs
CASE TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
10
OPERATION IN THIS AREA
LIMITED BY r_DS(ON)
1
T_J
T_C
=
=
MAX RATED
25^oC
0.10
RFP2N08
RFP2N010
0.01
1
10
100
V_DS, DRAIN TO SOURCE VOLTAGE (V)
1000
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
V_GS = 10V
V_GS = 20V
2.5
2.0
V_GS = 9V
V_GS = 8V
PULSE DURATION = 80µs
T_C = 25^oC
V_GS = 7V
V_GS = 6V
1A
V_GS = 5V
V_GS = 4V
0 1 2 3 4 5 6 7 8 9 10
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 4. SATURATION CHARACTERISTICS
V_DS = 10V
PULSE DURATION = 250µs
2.5
2.0
1.5
1.0
0.5
0
T_C = 125^oC
T_C = 25^oC
T_C = 40^oC
T_C = -40^oC
T_C = 25^oC
T_C = 125^oC
2
4
6
8
10
V_GS, GATE TO SOURCE VOLTAGE (V)
FIGURE 5. TRANSER CHARACTERISTICS
1.4 _{TC = 125oC}
1.2
1.0
0.8
T_C = 25^oC
0.6
0.4
T_C = -40^oC
0.2 _{VGS = 10V}
PULSE DURATION = 250µs
0
0.5
1.0
1.5
2.0
2.5
I_D, DRAIN CURRENT (A)
FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
5-3