RFP2N08 Datasheet, PDF (1/4 Pages) Intersil Corporation – 2A, 80V and 100V, 1.05 Ohm, N-Channel Power MOSFETs

Semiconductor
July 1998
Features
• 2A, 80V and 100V
• r_DS(ON) 1.05Ω
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFP2N08
TO-220AB
RFP2N08
RFP2N10
TO-220AB
RFP2N10
NOTE: When ordering, use entire part number.
RFP2N08,
RFP2N10
2A, 80V and 100V, 1.05 Ohm,
N-Channel Power MOSFETs
Description
These are N-channel enhancement mode silicon gate power
field effect transistors designed for applications such as
switching regulators, switching converters. motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA09282.
Symbol
D
G
S
Packaging
JEDEC TO-220AB
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper IC Handling Procedures.
Copyright © Harris Corporation 1998
5-1
File Number 2883.1