RFP15N08L Datasheet, PDF (3/5 Pages) Intersil Corporation – 15A, 80V, 0.140 Ohm, Logic Level, N-Channel Power MOSFET

RFP15N08L
Typical Performance Curves Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
0
0
50
100
150
T_C, CASE TEMPERATURE (^oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
100
I_D MAX CONTINUOUS
10
OPERATION IN ^{DC OPERATION}
THIS AREA IS
LIMITED BY r_DS(ON)
1
T_C = 25^oC
CURVES MUST BE
DERATED LINEARLY
WITH INCREASE IN
TEMPERATURE
0
1
10
100
1000
V_DS, DRAIN SOURCE VOLTAGE (V)
FIGURE 2. FORWARD BIAS SAFE OPERATING AREA
40
PULSE DURATION = 80µs
DUTY CYCLE ≤ 0.5% MAX
T_C = 25^oC
30
V_GS = 10V
V_GS = 7.5V
V_GS = 5V
V_GS = 4.5V
20
V_GS = 4V
V_GS = 3.5V
10
V_GS = 3V
V_GS = 2.5V
V_GS = 2V
0
0
1
2
3
4
5
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 3. SATURATION CHARACTERISTICS
16
V_DS = 10V
14 PULSE DURATION = 80µs
DUTY CYCLE ≤ 0.5% MAX
12
-40^oC
10
125^oC
25^oC
8
6
4
2
125^oC
-40^oC
0
0
1
2
3
4
5
V_GS, GATE TO SOURCE VOLTAGE (V)
FIGURE 4. TRANSFER CHARACTERISTICS
0.3
V_GS = 5V
PULSE DURATION = 80µs
DUTY CYCLE ≤ 0.5% MAX
0.2
T_C = 125^oC
0.1
25^oC
-40^oC
0
0
2
4
6
8
10 12 14 16
I_D, DRAIN TO SOURCE CURRENT (A)
FIGURE 5. DRAIN TO SOURCE ON RESISTANCE vs DRAIN
CURRENT
2.0
V_GS = 10V, I_D = 15A
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
1.5
1
0.5
0
-50
0
50
100
150
200
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 6. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
6-236