RFP15N08L Datasheet, PDF (2/5 Pages) Intersil Corporation – 15A, 80V, 0.140 Ohm, Logic Level, N-Channel Power MOSFET

RFP15N08L
Absolute Maximum Ratings T_C = 25^oC, Unless Otherwise Specified
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V_DS
Drain to Gate Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V_GS
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_DM
Maximum Power
Derated above
Dissipation
25^oC. . . . .
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. P_D
...
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_J, T_STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_pkg
RFP15N08L
80
80
±10
15
40
72
0.48
-55 to 175
300
260
UNITS
V
V
V
A
A
W
W/^oC
o_C
o_C
o_C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T_J = 25^oC to 150^oC.
Electrical Specifications T_C = 25^oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate to Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Voltage
Drain to Source On Resistance (Note 2)
Forward Transconductance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate Charge at 5V
Threshold Gate Charge
Thermal Resistance Junction to Case
BV_DSS I_D = 1mA, V_GS = 0V
V_GS(TH)
I_DSS
V_GS = V_DS, I_D = 1mA
T_C = 25^oC, V_DS = 65V, V_GS = 0V
T_C = 125^oC, V_DS = 65V, V_GS = 0V
I_GSS
V_GS = 10V, V_DS = 0V
V_DS(ON) I_D = 7.5A, V_GS = 5V
I_D = 15A, V_GS = 5V
r_DS(ON) I_D = 7.5A, V_GS = 5V
V_(plateau) V_DS = 15V, I_D = 15A
t_d(ON)
t_r
V_DD = 40V, I_D = 7.5A, R_GS = 6.25Ω,
V_GS = 5V
t_d(OFF)
t_f
Q_g(TOT) V_GS = 0-10V
Q_g(5)
V_GS = 0-5V
V_DD = 64V,
I_D = 15A,
R_L = 4.27Ω
Q_g(TH) V_GS = 0-1V
R_θJC
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Source to Drain Diode Voltage
V_SD
I_SD = 7.5A
Diode Reverse Recovery Time
t_rr
I_SD = 4A, dI_SD/dt = 100A/µs
NOTES:
2. Pulsed: pulse duration = ≤ 300µs maximum, duty cycle = ≤ 2%.
3. Repititive rating: pulse width limited by maximum junction temperature.
MIN TYP MAX UNITS
80
-
-
V
1
-
2.5
V
-
-
1
µA
-
-
50
µA
-
-
100
nA
-
-
1.05
V
-
-
3.0
V
-
-
0.140
Ω
-
-
4.5
V
-
-
40
ns
-
-
325
ns
-
-
325
ns
-
-
325
ns
-
-
80
nC
-
-
45
nC
-
-
3
nC
-
-
2.083 ^oC/W
MIN
TYP
MAX UNITS
-
-
1.4
V
-
225
-
ns
6-235