RFM4N35 Datasheet, PDF (3/4 Pages) Intersil Corporation – 4A, 350V and 400V, 2.000 Ohm, N-Channel Power MOSFETs

RFM4N35, RFM4N40, RFP4N35, RFP4N40
Typical Performance Curves
1.2
1.0
0.8
0.6
0.4
0.2
0
0
50
100
150
T_C, CASE TEMPERATURE (^oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
10
T_C = 25^OC
T_J = MAX RATED
1
OPERATION IN THIS
AREA MAY BE
LIMITED BY r_DS(ON)
RFM4N35, 40
RFP4N35, 40
RFM4N35, RFP4N35
RFM4N40, RFP4N40
0.1
1
10
100
1000
V_DS, DRAIN TO SOURCE VOLTAGE
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
8
V_DS = 20V
7 ^{PULSE DURATION = 80µs}
DUTY CYCLE ≤ 2%
6
5
4
3
2
T_C = 125^oC
T_C = -40^oC
1
0
0
2
4
6
8
10
V_GS, GATE TO SOURCE VOLTAGE (V)
FIGURE 5. TRANSFER CHARACTERISTICS
5
4
RFM4N35, RFM4N40
3
RFP4N35, RFP4N40
2
1
0
25
50
75
100
125
150
T_C, CASE TEMPERATURE (^oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
TC = 25^oC
7
80µs PULSE TEST
DUTY CYCLE ≤ 2%
6
V_GS = 20 V
5
V_GS = 8 - 10V
V_GS = 7V
V_GS = 6V
4
3
V_GS = 5V
2
1
V_GS = 4V
0
5
10
15
20
25
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 4. SATURATION CHARACTERISTICS
4
V_GS = 10V
T_C = 125^oC
PULSE DURATION = 80µs
DUTY CYCLE ≤ 2%
3
2
T_C = 25^oC
T_C = -40^oC
1
0
0 1 2 3 4 5 6 7 8 9 10
I_D, DRAIN CURRENT (A)
FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs DRAIN
CURRENT
3