RFM4N35 Datasheet, PDF (2/4 Pages) Intersil Corporation – 4A, 350V and 400V, 2.000 Ohm, N-Channel Power MOSFETs

RFM4N35, RFM4N40, RFP4N35, RFP4N40
Absolute Maximum Ratings T_C = 25^oC Unless Otherwise Specified
RFM4N35
RFM4N40
RFP4N35
RFP4N40 UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DS
Drain to Gate Voltage (R_GS = 1MΩ) (Note 1) . . . . . . . . . . . . . . . V_DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I_D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . T_J, T_STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . T_L
Package Body for 10s, See Techbrief 334 (for TO-220) . . . . . . . .T_pkg
350
350
4
8
±20
75
0.6
-55 to 150
300
260
400
400
4
8
±20
75
0.6
-55 to 150
300
260
350
350
4
8
±20
60
0.48
-55 to 150
300
260
400
400
4
8
±20
60
0.48
-55 to 150
300
260
V
V
A
A
V
W
W/^oC
o_C
o_C
o_C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T_J = 25^oC to 125^oC.
Electrical Specifications T_C = 25^oC, Unless Otherwise Specified
PARAMETER
Drain to Source Breakdown Voltage
RFM4N40, RFP4N40
RFM4N35, RFP4N35
Gate Threshold Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Drain to Source On-Voltage (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse-Transfer Capacitance
Thermal Resistance Junction to Case
SYMBOL
TEST CONDITIONS
BV_DSS I_D = 250µA, V_GS = 0
V_GS(TH)
I_DSS
I_GSS
r_DS(ON)
V_DS(ON)
t_D(ON)
t_r
t_D(OFF)
t_f
C_ISS
C_OSS
C_RSS
R_θJC
V_GS = V_DS , I_D = 250µA (Figure 8)
V_DS = Rated BV_DSS
V_DS = 0.8 x Rated BV_DSS, T_C = 125^oC
V_GS = ±20V, V_DS = 0
I_D = 4A, V_GS = 10V (Figures 6, 7)
I_D = 4A, V_GS = 10V
V_DD = 200V, I_D = 2A, R_G = 50Ω
R_L = 100Ω, V_GS = 10V
(Figures 10, 11, 12)
V_DS = 25V,
V_GS = 0V
f = 1MHz (Figure 9)
RFM4N35, RFM4N40
RFP4N35, RFP4N40
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Source to Drain Diode Voltage (Note 2)
V_SD
I_SD = 2A
Reverse Recorvery Time
t_rr
I_SD = 4A, dI_SD/dt = 100A/µs
NOTES:
2. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature.
MIN TYP MAX UNITS
400
-
-
V
350
-
-
V
2
-
4
V
-
-
1
µA
-
-
25
µA
-
-
±100
nA
-
-
2.000
Ω
-
-
8
V
-
12
45
ns
-
42
60
ns
-
130
200
ns
-
62
100
ns
-
-
750
pF
-
-
150
pF
-
-
100
pF
-
-
1.67 ^oC/W
-
-
2.083 ^oC/W
MIN TYP MAX UNITS
-
-
1.4
V
-
800
-
ns
2