RFL4N12 Datasheet, PDF (3/4 Pages) Intersil Corporation – 4A, 120V and 150V, 0.400 Ohm, N-Channel Power MOSFETs

RFL4N12, RFL4N15
Typical Performance Curves Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
0
0
50
100
150
T_C, CASE TEMPERATURE (^oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
25
50
75
100
125
150
T_C, CASE TEMPERATURE (^oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
10
T_C = 25^oC
T_J = MAX RATED
1
DC _OPERATION
OPERATION IN THIS AREA
LIMITED BY r_DS(ON)
0.1
RFL4N12
RFL4N15
0.01
1
10
100
V_DS, DRAIN TO SOURCE VOLTAGE (V)
1000
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
20
PULSE DURATION = 250µs
T_C = 25^oC
15
V_GS = 20V
V_GS = 10V
10
V_GS = 8V
V_GS = 7V
V_GS = 6V
5
V_GS = 5V
V_GS = 4V
0
0 1 2 3 4 5 6 7 8 9 10
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 4. SATURATION CHARACTERISTICS
20
V_DS = 10V
PULSE DURATION = 250µs
15
T_C = -40^oC
T_C = 25^oC
10
T_C = 125^oC
5
T_C = 125^oC
T_C = -40^oC
0
0
2
4
6
8
10
V_GS, GATE TO SOURCE (V)
FIGURE 5. TRANSFER CHARACTERISTICS
0.8
V_GS = 10V
0.7 ^{PULSE DURATION = 250µs}
0.6
T_C = 125^oC
0.5
0.4
T_C = 25^oC
0.3
0.2
T_C = -40^oC
0.1
0
0 2 4 6 8 10 12 14 16 18 20
I_D, DRAIN CURRENT (A)
FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs DRAIN
CURRENT
5-3