RFL4N12 Datasheet, PDF (2/4 Pages) Intersil Corporation – 4A, 120V and 150V, 0.400 Ohm, N-Channel Power MOSFETs

RFL4N12, RFL4N15
Absolute Maximum Ratings T_C = 25^oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DSS
Drain to Gate Voltage (R_GS = 1MΩ) (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DGR
Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_J, T_STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L
RFL4N12
120
120
4
15
±20
8.33
0.0667
-55 to 150
260
RFL4N15
150
150
4
15
±20
8.33
0.0667
-55 to 150
260
UNITS
V
V
A
A
V
W
W/^oC
o_C
o_C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of
the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T_J = 25^oC to 125^oC.
Electrical Specifications T_C = 25^oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Drain to Source Breakdown Voltage
RFL4N12
BV_DSS I_D = 250µA, V_GS = 0V
120 -
-
V
RFL4N15
150 -
-
V
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On-Voltage (Note 2)
Drain to Source On Resistance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse-Transfer Capacitance
Thermal Resistance Junction to Case
V_GS(TH)
I_DSS
I_GSS
V_DS(ON)
r_DS(ON)
t_d(ON)
t_r
t_d(OFF)
t_f
C_ISS
C_OSS
C_RSS
R_θJC
V_GS = V_DS, I_D = 250µA (Figure 8)
V_DS = Rated BV_DSS
V_DS = 0.8 x Rated BV_DSS, T_C = 125^oC
V_GS = ±20V, V_DS = 0V
I_D = 4A, V_GS = 10V
I_D = 4A, V_GS = 10V (Figures 6, 7)
V_DD = 75V, I_D ≈ 2A, R_G = 50Ω, V_GS = 10V
(Figures 10, 11, 12)
V_DS = 25V, V_GS = 0V, f = 1MHz
(Figure 9)
2
-
4
V
-
-
1
µA
-
-
25 µA
-
- ±100 nA
-
-
1.6
V
-
- 0.400 Ω
-
40 60 ns
- 165 250 ns
-
90 135 ns
-
90 135 ns
-
- 850 pF
-
- 230 pF
-
- 100 pF
-
-
15 ^oC/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Source to Drain Diode Voltage (Note 2)
V_SD
I_SD = 2A
Reverse Recovery Time
t_rr
I_SD = 2A, dI_SD/dt = 100A/µs
NOTE:
2. Pulse Test: pulse duration ≤ 300µs max, duty cycle ≤ 2%.
1.4
V
200 -
ns
5-2