RFL1N08 Datasheet, PDF (3/4 Pages) Intersil Corporation – 1A, 80V and 100V, 1.200 Ohm, N-Channel, Power MOSFETs

RFL1N08, RFL1N10
Typical Performance Curves Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150
T_C, CASE TEMPERATURE (^oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
1.2
1.0
0.8
0.6
0.4
0.2
0
25
50
75
100
125
150
T_C, CASE TEMPERATURE (^oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
10
OPERATION IN THIS AREA
LIMITED BY R_DS(ON)
1
T_C =25^oC
T_J = MAX RATED
0.1
0.01
1
10
100
V_DS, DRAIN TO SOURCE VOLTAGE (V)
1000
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
PULSE DURATION = 80µs
V_GS = 10V
V_GS = 20V
2.5
V_GS = 9V
2
V_GS = 8V _{VGS = 7V}
V_GS = 6V
1A
V_GS = 5V
V_GS = 4V
0 1 2 3 4 5 6 7 8 9 10
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 4. SATURATION CHARACTERISTICS
4.0
PULSE DURATION = 80µs
3.5 ^{VDS = 10V}
1.6
V_GS = 10V
1.4 ^{PULSE DURATION = 80µs}
3.0
1.2 _{CASE TEMPERATURE (TC) = 125oC}
2.5
1
2.0
1.5
T_C = -40^oC
1
T_C = 25^oC
0.5
T_C = 125^oC
0
0
2
4
6
8
10
V_GS, GATE TO SOURCE VOLTAGE (V)
0.8
0.6
0.4
0.2
0
0
T_C = 25^oC
T_C = -40^oC
0.5
1
1.5
2.0
2.5
I_D, DRAIN CURRENT (A)
FIGURE 5. TRANSFER CHARACTERISTICS
FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
5-3