RFL1N08 Datasheet, PDF (1/4 Pages) Intersil Corporation – 1A, 80V and 100V, 1.200 Ohm, N-Channel, Power MOSFETs

Semiconductor
September 1998
RFL1N08,
RFL1N10
1A, 80V and 100V, 1.200 Ohm,
N-Channel, Power MOSFETs
[ /Title
(RFL1N
08,
RFL1N1
0)
/Subject
(1A,
80V and
100V,
1.200
Ohm, N-
Chan-
nel,
Power
MOS-
FETs)
/Author
()
/Key-
words
(Harris
Semi-
conduc-
tor, N-
Chan-
nel,
Power
MOS-
FETs,
TO-
204AA)
/Creator
()
/DOCIN
FO pdf-
Features
• 1A, 80V and 100V
• r_DS(ON) = 1.200Ω
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFL1N08
TO-205AF
RFL1N08
RFL1N10
TO-205AF
RFL1N10
NOTE: When ordering, use the entire part number.
Description
These are N-channel enhancement mode silicon-gate power
field-effect transistors designed for applications such as
switching regulators, switching converters, motor drivers,
relay drivers and drivers for high-power bipolar switching
transistors requiring high speed and low gate-drive power.
These types can be operated directly from integrated cir-
cuits.
Formerly developmental type TA09282.
Symbol
D
G
S
Packaging
JEDEC TO-204AA
DRAIN
(CASE)
GATE
SOURCE
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1998
5-1
File Number 1385.2