RFG75N05E Datasheet, PDF (3/6 Pages) Intersil Corporation – 75A, 50V, 0.008 Ohm, N-Channel Power MOSFET

RFG75N05E
Typical Performance Curves Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100 125 150 175
T_C, CASE TEMPERATURE (^oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
80
70
60
50
40
30
20
10
0
25
50
75
100
125
150
175
T_C, CASE TEMPERATURE (^oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
100
I_D MAX CONTINUOUS
1000
OPERATION IN THIS AREA
10 ^{MAY BE LIMITED BY rDS(ON)}
DC
T_C = 25^oC
T_J = MAX RATED
SINGLE PULSE
1
1
10
10²
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
200
V_GS = 10V
160
120
80
V_GS = 7.0V
V_GS = 6.0V
T_C = 25^oC
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V_GS = 5.0V
40
V_GS = 4.0V
0
0
1.5
3.0
4.5
6.0
7.5
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 5. SATURATION CHARACTERISTICS
Idm
100
STARTING T_J = 150^oC
STARTING T_J = 25^oC
If R = 0
t_AV = (L)(I_AS)/(1.3 RATED BV_DSS - V_DD)
If R ≠ 0
t_AV = (L/R)ln[(I_AS*R)/(1.3 RATED BV_DSS - V_DD) +1]
10
0.01
0.10
1
10
t_AV, TIME IN AVALANCHE (ms)
FIGURE 4. UNCLAMPED INDUCTIVE SWITCHING SOA
(SINGLE PULSE UIS SOA)
200
V_DD > I_D x r_DS(ON)
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
160
120
-55^oC
25^oC
175^oC
80
40
0
0
2
4
6
8
10
V_GS, GATE TO SOURCE VOLTAGE (V)
FIGURE 6. TRANSFER CHARACTERISTICS
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