RFG75N05E Datasheet, PDF (2/6 Pages) Intersil Corporation – 75A, 50V, 0.008 Ohm, N-Channel Power MOSFET

RFG75N05E
Absolute Maximum Ratings T_C = 25^oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V_DSS
Drain to Gate Voltage (R_GS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DGR
Continuous Drain Current (Current Limited by Package). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V_GS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrostatic Discharge Rating, MIL-STD-883, Category B(2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E_SD
Single Pulse Avalanche Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_J, T_STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_pkg
RFG75N05E
50
50
75
200
±20
240
1.6
2
Refer to UIS SOA
Curves
-55 to 175
300
260
UNITS
V
V
A
A
V
W
W/^oC
kV
o_C
o_C
o_C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T_J = 25^oC to 125^oC.
Electrical Specifications T_C = 25^oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Drain to Source Breakdown Voltage
BV_DSS V_GS = 0V, I_D = 250µA (Figure 9)
50
-
-
V
Gate Threshold Voltage
V_GS(TH) V_GS = V_DS, I_D = 250µA (Figure 8)
2.0
-
4.0
V
Zero Gate Voltage Drain Current
I_DSS V_DS = Rated BV_DSS, V_GS = 0V
-
V_DS = 0.8 x Rated BV_DSS, V_GS = 0V, T_C = 150^oC
-
-
1
µA
-
25
µA
Gate to Source Leakage
I_GSS V_GS = ±20V
-
- ±100 nA
Drain to Source on Resistance (Note 2) r_DS(ON) V_GS = 10V, I_D = 75A (Figure 7)
-
- 0.008 Ω
Turn On Time
Turn On Delay Time
Rise Time
t_(ON)
t_d(ON)
t_r
V_DD = 25V, I_D ≈ 37.5A,
R_L = 0.67Ω, R_G = 1.67Ω, V_GS = 10V,
(Figure 11)
-
-
125
ns
-
17
-
ns
-
75
-
ns
Turn Off Delay Time
t_d(OFF)
-
70
-
ns
Fall Time
t_f
-
17
-
ns
Turn Off Time
t_(OFF)
-
-
125
ns
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate Charge at 10V
Threshold Gate Charge
Junction to Case
Junction to Ambient
Q_g(TOT) V_GS = 0, 20V
Q_g(10)
Q_g(TH)
R_θJC
R_θJA
V_GS = 0, 10V
V_GS = 0, 2V
V_DD = 40V, I_D = 75A,
R_L = 0.53Ω
I_G(REF) = 3.44mA
(Figure 11)
-
-
400
nC
-
-
220
nC
-
-
15
nC
-
- 0.625 ^oC/W
-
-
80 ^oC/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Source to Drain Diode Voltage
V_SD
I_SD = 75A
Diode Reverse Recovery Time
t_rr
I_SD = 75A, dI_SD/dt = 100A/µs
NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive pulse: pulse width is limited by maximum junction temperature.
4. Refer to Intersil Application Notes AN9321 and AN9322. See Figure 4.
-
-
1.5
V
-
-
125
ns
4-482