RFG40N10 Datasheet, PDF (3/6 Pages) Fairchild Semiconductor – 40A, 100V, 0.040 Ohm, N-Channel Power MOSFETs

RFG40N10, RFP40N10, RF1S40N10SM
Typical Performance Curves Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100 125 150 175
T_C, CASE TEMPERATURE (^oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
40
32
24
16
8
0
25
50
75
100
125
150
175
T_C, CASE TEMPERATURE (^oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
100
V_DSS(MAX) = 100V
10
T_C = 25^oC
SINGLE PULSE
T_J = MAX RATED
DC OPERATION
1
OPERATION IN THIS
AREA MAY BE
LIMITED BY r_DS(ON)
0.1
1
10
100
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
100
PULSE DURATION = 80µs
80
= ^7V
V ^GS
DUTY CYCLE = 0.5% MAX
T_C = 25^oC
60
V_GS = 6V
40
20
0
0
V_GS = 5V
V_GS = 4V
2
4
6
8
10
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 5. SATURATION CHARACTERISTICS
100
10
STARTING
STARTING
T_{J = 150 oC}
T_J
=
25
o_C
IF R = 0
t_AV = (L) (I_AS) / (1.3 RATED BV_DSS - V_DD)
IF R ≠ 0
t_AV = (L/R) LN [(I_AS*R) / (1.3 RATED BV_DSS - V_DD) + 1]
1
0.01
0.1
1
10
t_AV, TIME IN AVALANCHE (ms)
NOTE: Refer to Intersil application notes AN9321 and AN9322.
FIGURE 4. UNCLAMPED INDUCTIVE SWITCHING
CAPABILITY
100
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
80 V_DD = 15V
60
-55^oC
25^oC
175^oC
40
20
0
0
2
4
6
8
10
V_GS, GATE TO SOURCE VOLTAGE (V)
FIGURE 6. TRANSFER CHARACTERISTICS
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