RFG40N10 Datasheet, PDF (2/6 Pages) Fairchild Semiconductor – 40A, 100V, 0.040 Ohm, N-Channel Power MOSFETs

RFG40N10, RFP40N10, RF1S40N10SM
Absolute Maximum Ratings T_C = 25^oC, Unless Otherwise Specified
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DSS
Drain to Gate Voltage (R_GS = 1MΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . V_DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GS
Drain Current
Continuous (Figure 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I_D
Pulsed Drain Current (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_DM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E_AS
Power Dissipation . . .
Derate Above 25^oC
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P_D
..
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_J, T_STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L
Package Body for 10s, see Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T_pkg
RFG40N10, RFP40N10,
RF1S40N10SM
100
100
±20
40
100
Figures 4, 12, 13
160
1.07
-55 to 175
300
260
UNITS
V
V
V
A
A
W
W/^oC
o_C
o_C
o_C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. T_J = 25^oC to 150^oC.
2. Repetitive Rating: pulse width limited by maximum junction temperature.
Electrical Specifications T_C = 25^oC, Unless Otherwise Specified
PARAMETER
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at 10V
Threshold Gate Charge
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
SYMBOL
BV_DSS
V_GS(TH)
I_DSS
I_GSS
r_DS(ON)
t_ON
t_d(ON)
t_r
t_d(OFF)
t_f
t_OFF
Q_g(TOT)
Q_g(10)
Q_g(TH)
R_θJC
R_θJA
TEST CONDITIONS
I_D = 250µA, V_GS = 0V (Figure 9)
V_GS = V_DS, I_D = 250µA (Figure 8)
V_DS = 80V,
V_GS = 0V
T_C = 25^oC
T_C = 150^oC
V_GS = ±20V
I_D = 40A, V_GS = 10V (Figure 7)
V_DD = 50V, I_D = 20A,
R_L = 2.5Ω, V_GS = 10V, R_GS = 4.2 Ω
(Figure 11)
V_GS = 0V to 20V
V_GS = 0V to 10V
V_GS = 0V to 2V
V_DD = 80V,
I_D = 40A,
R_L = 2.0Ω
(Figures 11)
TO-247
TO-220AB and TO-263AB
Source to Drain Diode Specifications
PARAMETER
Source to Drain Diode Voltage
Reverse Recovery Time
SYMBOL
TEST CONDITIONS
V_SD
t_rr
I_SD = 40A
I_SD = 40A, dI_SD/dt = 100A/µs
MIN TYP MAX UNITS
100
-
-
V
2
-
4
V
-
-
1
µA
-
-
50
µA
-
-
±100
nA
-
-
0.040
Ω
-
-
80
ns
-
17
-
ns
-
30
-
ns
-
42
-
ns
-
20
-
ns
-
-
100
ns
-
-
300
nC
-
-
150
nC
-
-
7.5
nC
-
-
0.94 ^oC/W
-
-
30
o_C/W
-
-
62
o_C/W
MIN
TYP
MAX UNITS
-
-
1.5
V
-
-
200
ns
4-451