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RFD7N10LE Datasheet, PDF (3/7 Pages) Intersil Corporation – 7A, 100V, 0.300 Ohm, N-Channel, Logic Level, Power MOSFETs
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RFD7N10LE, RFD7N10LESM
Typical Performance Curves Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75 100 125 150 175
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
8
6
4
2
0
25
50
75
100
125
150
175
TC, CASE TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
1
0.5
0.2
0.1
0.1 0.05
0.02
0.01
SINGLE PULSE
0.01
10-5
10-4
PDM
10-3
10-2
10-1
t, RECTANGULAR PULSE DURATION (s)
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM X ZθJC X RθJC + TC
100
101
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
20
14
10
100µs
1
0.1
1
1ms
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)
TC = 25oC
TJ = MAX RATED
VDSS MAX = 100V
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
10ms
200
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
20
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
14
VGS = 5V
10
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
I = I25 (
175 - TC
150 )
5
10-3 10-2
10-1
100
101
102
103
104
t, PULSE WIDTH (ms)
FIGURE 5. PEAK CURRENT CAPABILITY
3
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