RFD7N10LE Datasheet, PDF (2/7 Pages) Intersil Corporation – 7A, 100V, 0.300 Ohm, N-Channel, Logic Level, Power MOSFETs

RFD7N10LE, RFD7N10LESM
Absolute Maximum Ratings T_C = 25^oC, Unless Otherwise Specified
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DSS
Drain to Gate Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GS
Drain Current
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I_D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_DM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E_AS
Power Dissipation . . .
Derate Above 25^oC
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P_D
..
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_J, T_STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T_pkg
RFD7N10LE,
RFD7N10LESM
100
100
+10, -8
7
Refer to Peak Current Curve
Refer to UIS Curve
47
0.318
-55 to 175
300
260
UNITS
V
V
V
A
W
W/^oC
o_C
o_C
o_C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T_J = 25^oC to 150^oC.
Electrical Specifications T_C = 25^oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNITS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
On Resistance
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at 5V
Threshold Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
BV_DSS I_D = 250µA, V_GS = 0V
100
-
-
V
V_GS(TH) V_GS = V_DS, I_D = 250µA
1
-
3
V
I_DSS
V_DS = 95V, V_GS = 0V
-
V_DS = 90V, V_GS = 0V, T_C = 150^oC
-
-
1
µA
-
250
µA
I_GSS
V_GS = +10, -8V
-
-
10
µA
r_DS(ON) I_D = 7A, V_GS = 5V
-
-
0.300
Ω
t_ON
t_d(ON)
t_r
V_DD = 50V, I_D = 7A
R_L = 7.1Ω, V_GS = 5V
R_GS = 2.5Ω
-
-
110
ns
-
10
-
ns
-
65
-
ns
t_d(OFF)
-
23
-
ns
t_f
-
18
-
ns
t_OFF
-
-
60
ns
Q_g(TOT)
Q_g(5)
Q_g(TH)
V_GS = 0 to 10V
V_GS = 0 to 5V
V_GS = 0 to 1V
V_DD = 80V
I_D = 7A,
R_L = 11.4Ω
-
125
150
nC
-
67
80
nC
-
3.7
4.5
nC
C_ISS
C_OSS
V_DS = 25V, V_GS = 0V
f = 1MHz
-
360
-
pF
-
70
-
pF
C_RSS
R_θJC
R_θJA
TO-251 and TO-252 Package
-
20
-
pF
-
-
3.15
o_C/W
-
-
100
o_C/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
Source to Drain Diode Voltage
V_SD
Reverse Recovery Time
t_rr
TEST CONDITIONS
I_SD = 7A
I_SD = 7A, dI_SD/dt = 100A/µs
MIN
TYP
MAX UNITS
-
-
1.5
V
-
-
130
ns
2