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| JANSR2N7411 Datasheet, PDF (3/8 Pages) Intersil Corporation – 2.5A, -100V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFET | |||
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JANSR2N7411
Source to Drain Diode Speciï¬cations
PARAMETER
Forward Voltage
Reverse Recovery Time
SYMBOL
VSD
trr
TEST CONDITIONS
ISD = 2.5A
ISD = 2.5A, dISD/dt = 100A/µs
MIN
TYP
MAX
-0.6
-
-1.8
-
-
110
Electrical Speciï¬cations up to 100K RAD TC = 25oC, Unless Otherwise Speciï¬ed
PARAMETER
SYMBOL TEST CONDITIONS
MIN
Drain to Source Breakdown Volts (Note 3)
BVDSS VGS = 0, ID = 1mA
-100
Gate to Source Threshold Volts
(Note 3)
VGS(TH) VGS = VDS, ID = 1mA
-2.0
Gate to Body Leakage
(Notes 2, 3)
IGSS
VGS = ±20V, VDS = 0V
-
Zero Gate Leakage
(Note 3)
IDSS
VGS = 0, VDS = -80V
-
Drain to Source On-State Volts
(Notes 1, 3)
VDS(ON) VGS = -12V, ID = 2.5A
-
Drain to Source On Resistance
(Notes 1, 3)
rDS(ON)12 VGS = -12V, ID = 1.5A
-
NOTES:
1. Pulse test, 300µs Max.
2. Absolute value.
3. Insitu Gamma bias must be sampled for both VGS = -12V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS.
Single Event Effects (SEB, SEGR) (Note 4)
MAX
-
-6.0
100
25
-3.58
1.30
TEST
SYMBOL
ENVIRONMENT (NOTE 5)
ION
SPECIES
TYPICAL LET
(MeV/mg/cm)
TYPICAL
RANGE (µ)
APPLIED
VGS BIAS
(V)
Single Event Effects Safe Operating
SEESOA
Ni
26
43
20
Area
Br
37
36
10
Br
37
36
15
Br
37
36
20
NOTES:
4. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN.
5. Fluence = 1E5 ions/cm2 (typical), TC = 25oC.
6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
UNITS
V
ns
UNITS
V
V
nA
µA
V
â¦
(NOTE 6)
MAXIMUM
VDS BIAS
(V)
-100
-100
-80
-50
Typical Performance Curves Unless Otherwise Speciï¬ed
-120
LET = 26MeV/mg/cm2, RANGE = 43µ
LET = 37MeV/mg/cm2, RANGE = 36µ
FLUENCE = 1E5 IONS/cm2 (TYPICAL)
-100
-80
-60
1E-3
1E-4
1E-5
ILM = 10A
30A
100A
-40
1E-6
-20
TEMP = 25oC
0
1E-7
0
5
10
15
20
25
-10
VGS (V)
300A
-30
-100
-300
DRAIN SUPPLY (V)
-1000
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA
FIGURE 2. DRAIN INDUCTANCE REQUIRED TO LIMIT
GAMMA DOT CURRENT TO IAS
2-102
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