JANSR2N7411 Datasheet, PDF (1/8 Pages) Intersil Corporation – 2.5A, -100V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFET

JANSR2N7411
Formerly FSL9110R4
June 1998
2.5A, -100V, 1.30 Ohm, Rad Hard,
P-Channel Power MOSFET
Features
• 2.5A, -100V, r_DS(ON) = 1.30Ω
• Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
• Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm² with
V_DS up to 80% of Rated Breakdown and
V_GS of 10V Off-Bias
• Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BV_DSS
- Typically Survives 2E12 if Current Limited to I_DM
• Photo Current
- 0.3nA Per-RAD(Si)/s Typically
• Neutron
- Maintain Pre-RAD Specifications
for 3E13 Neutrons/cm²
- Usable to 3E14 Neutrons/cm²
Ordering Information
PART NUMBER
JANSR2N7411
PACKAGE
TO-205AF
Die Family TA17716.
MIL-PRF-19500/639.
BRAND
JANSR2N7411
Description
The Discrete Products Operation of Intersil Corporationhas
developed a series of Radiation Hardened MOSFETs specif-
ically designed for commercial and military space applica-
tions. Enhanced Power MOSFET immunity to Single Event
Effects (SEE), Single Event Gate Rupture (SEGR) in particu-
lar, is combined with 100K RADS of total dose hardness to
provide devices which are ideally suited to harsh space envi-
ronments. The dose rate and neutron tolerance necessary
for military applications have not been sacrificed.
The Intersil portfolio of SEGR resistant radiation hardened
MOSFETs includes N-Channel and P-Channel devices in a
variety of voltage, current and on-resistance ratings.
Numerous packaging options are also available.
This MOSFET is an enhancement-mode silicon-gate power
field-effect transistor of the vertical DMOS (VDMOS) struc-
ture. It is specially designed and processed to be radiation
tolerant. The MOSFET is well suited for applications
exposed to radiation environments such as switching regula-
tion, switching converters, motor drives, relay drivers and
drivers for high-power bipolar switching transistors requiring
high speed and low gate drive power. This type can be
operated directly from integrated circuits.
Also available at other radiation and screening levels. See us
on the web, Intersil’s home page: http://www.intersil.com. Con-
tact your local Intersil Sales Office for additional information.
Symbol
D
Package
TO-205AF
G
S
DG S
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
2-100
File Number 4493