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JANSR2N7403 Datasheet, PDF (3/8 Pages) Intersil Corporation – 22A, -100V, 0.140 Ohm, Rad Hard, P-Channel Power MOSFET
JANSR2N7403
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
Forward Voltage
VSD
ISD = 22A
-0.6
-
Reverse Recovery Time
trr
ISD = 22A, dISD/dt = 100A/µs
-
-
Electrical Specifications up to 100K RAD TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Drain to Source Breakdown Volts (Note 3)
BVDSS
VGS = 0, ID = 1mA
-100
Gate to Source Threshold Volts (Note 3)
VGS(TH) VGS = VDS, ID = 1mA
-2.0
Gate to Body Leakage
(Notes 2, 3)
IGSS
VGS = ±20V, VDS = 0V
-
Zero Gate Leakage
(Note 3)
IDSS
VGS = 0, VDS = -80V
-
Drain to Source On-State Volts (Notes 1, 3)
VDS(ON) VGS = -12V, ID = 22A
-
Drain to Source On Resistance (Notes 1, 3)
rDS(ON)12 VGS = -12V, ID = 14A
-
NOTES:
1. Pulse test, 300µs Max.
2. Absolute value.
3. Insitu Gamma bias must be sampled for both VGS = -12V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS.
Single Event Effects (SEB, SEGR) (Note 4)
MAX
-1.8
270
MAX
-
-6.0
100
25
-3.23
0.140
TEST
SYMBOL
ENVIRONMENT (NOTE 5)
ION
SPECIES
TYPICAL LET
(MeV/mg/cm)
TYPICAL
RANGE (µ)
APPLIED
VGS BIAS
(V)
Single Event Effects Safe Operating
SEESOA
Ni
26
43
20
Area
Br
37
36
10
Br
37
36
15
Br
37
36
20
NOTES:
4. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN.
5. Fluence = 1E5 ions/cm2 (typical), TC = 25oC.
6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
UNITS
V
ns
UNITS
V
V
nA
µA
V
Ω
(NOTE 6)
MAXIMUM
VDS BIAS
(V)
-100
-100
-80
-50
Typical Performance Curves Unless Otherwise Specified
-120
LET = 26MeV/mg/cm2, RANGE = 43µ
LET = 37MeV/mg/cm2, RANGE = 36µ
FLUENCE = 1E5 IONS/cm2 (TYPICAL)
1E-3
-100
1E-4
-80
1E-5
-60
-40
1E-6
ILM = 10A
30A
100A
300A
-20
TEMP = 25oC
0
0
5
10
15
20
25
VGS (V)
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING
AREA
1E-7
-10
-30
-100
-300
DRAIN SUPPLY (V)
-1000
FIGURE 2. DRAIN INDUCTANCE REQUIRED TO LIMIT
GAMMA DOT CURRENT TO IAS
2-72