JANSR2N7403 Datasheet, PDF (2/8 Pages) Intersil Corporation – 22A, -100V, 0.140 Ohm, Rad Hard, P-Channel Power MOSFET

JANSR2N7403
Absolute Maximum Ratings T_C = 25^oC, Unless Otherwise Specified
JANSR2N7403
UNITS
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V_DS
Drain to Gate Voltage (R_GS = 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DGR
Continuous Drain Current
T_C = 25^oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_D
T_C = 100^oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GS
Maximum Power Dissipation
T_C = 25^oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_T
T_C = 100^oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_T
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
-100
-100
22
14
66
±20
125
50
1.00
V
V
A
A
A
V
W
W
W/^oC
Single Pulsed Avalanche Current, L = 100µH, (See Test Figure) . . . . . . . . . . . . . . . . . . . . . I_AS
66
A
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_S
22
A
Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_SM
66
A
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_J, T_STG
-55 to 150
o_C
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L
300
o_C
(Distance >0.063in (1.6mm) from Case, 10s Max)
Weight (Typical) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
9.3
g
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications T_C = 25^oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On-State Voltage
Drain to Source On Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge (Not on slash sheet)
Gate Charge at 12V
Threshold Gate Charge (Not on slash sheet)
Gate Charge Source
Gate Charge Drain
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
BV_DSS
V_GS(TH)
I_DSS
I_GSS
I_D = 1mA, V_GS = 0V
V_GS = V_DS,
I_D = 1mA
T_C = -55^oC
T_C = 25^oC
T_C = 125^oC
V_DS = -80V,
V_GS = 0V
T_C = 25^oC
T_C = 125^oC
V_GS = ±20V
T_C = 25^oC
T_C = 125^oC
V_DS(ON)
r_DS(ON)12
V_GS = -12V, I_D = 22A
I_D = 14A,
V_GS = -12V
T_C = 25^oC
T_C = 125^oC
t_d(ON)
t_r
t_d(OFF)
V_DD = -50V, I_D = 22A,
R_L = 2.27Ω, V_GS = -12V,
R_GS = 4.7Ω
t_f
Q_{g (TOT)}
Q_{g (12)}
V_GS = 0V to -20V V_DD = -50V,
V_GS = 0V to -12V ^{ID = 22A}
Q_g(TH) V_GS = 0V to -2V
Q_gs
Q_gd
R_θJC
R_θJA
MIN
-100
-
-2.0
-1.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP MAX UNITS
-
-
V
-
-7.0
V
-
-6.0
V
-
-
V
-
25
µA
-
250
µA
-
100
nA
-
200
nA
-
-3.23 V
0.090 0.140 Ω
-
0.217 Ω
-
110
ns
-
390
ns
-
300
ns
-
170
ns
-
240 nC
130 160 nC
-
9.5
nC
21
29
nC
51
65
nC
-
1.0 ^oC/W
-
48 ^oC/W
2-71