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JANSR2N7401 Datasheet, PDF (3/8 Pages) Intersil Corporation – 6A, 250V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFET
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JANSR2N7401
Source to Drain Diode Specifications
PARAMETER
Forward Voltage
Reverse Recovery Time
SYMBOL
VSD
trr
TEST CONDITIONS
ISD = 6A
ISD = 6A,dISD/dt = 100A/µs
MIN
TYP
0.6
-
-
-
Electrical Specifications up to 100K RAD TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Drain to Source Breakdown Volts (Note 3)
BVDSS VGS = 0, ID = 1mA
250
Gate to Source Threshold Volts
(Note 3)
VGS(TH) VGS = VDS, ID = 1mA
1.5
Gate to Body Leakage
(Notes 2, 3)
IGSS VGS = ±20V, VDS = 0V
-
Zero Gate Leakage
(Note 3)
IDSS
VGS = 0, VDS = 200V
-
Drain to Source On-State Volts
(Notes 1, 3)
VDS(ON) VGS = 12V, ID = 6A
-
Drain to Source On Resistance
(Notes 1, 3)
rDS(ON)12 VGS = 12V, ID = 4A
-
NOTES:
1. Pulse test, 300µs Max.
2. Absolute value.
3. Insitu Gamma bias must be sampled for both VGS = 12V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS.
Single Event Effects (SEB, SEGR) Note 4
MAX
1.8
420
MAX
-
4.0
100
25
3.78
0.600
UNITS
V
ns
UNITS
V
V
nA
µA
V
Ω
TEST
SYMBOL
ENVIRONMENT (NOTE 5)
ION
SPECIES
TYPICAL LET
(MeV/mg/cm)
TYPICAL
RANGE (µ)
APPLIED
VGS BIAS
(V)
Single Event Effects Safe Operating Area SEESOA
Ni
26
43
-20
Br
37
36
-5
Br
37
36
-10
Br
37
36
-15
Br
37
36
-20
NOTES:
4. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN.
5. Fluence = 1E5 ions/cm2 (typical), TC = 25oC.
6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
(NOTE 6)
MAXIMUM
VDS BIAS (V)
250
250
200
125
50
Typical Performance Curves Unless Otherwise Specified
LET = 26MeV/mg/cm2, RANGE = 43µ
LET = 37MeV/mg/cm2, RANGE = 36µ
300
FLUENCE = 1E5 IONS/cm2 (TYPICAL)
1E-3
1E-4
200
1E-5
100
1E-6
ILM = 10A
30A
100A
300A
TEMP = 25oC
0
0
-5
-10
-15
VGS (V)
-20
-25
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA
4-3
1E-7
10
30
100
300
DRAIN SUPPLY (V)
1000
FIGURE 2. DRAIN INDUCTANCE REQUIRED TO LIMIT
GAMMA DOT CURRENT TO IAS
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